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MOSFET性能改进：RDS(ON)的决定因素
下载“第Ⅲ章：晶体管” (PDF:2.0MB)
（1）MOSFET器件结构将根据要求的耐受电压来选择。确定导通电阻RDS(ON)的因素如图3-7和方程式3-（1）所示。根据器件的结构，决定导通电阻的因素比例将发生变化。
（2）例如，许多中高压MOSFET（250V及以上）具有平面MOS（π-MOS）结构，而小于200V的产品大多具有沟槽MOS（U-MOS）结构。因此，当耐受电压VDSS＝600V时，Rdrift成为主导因素，当耐受电压是30V时，因素Rch的比例较高。
RDS(ON）＝Rsub＋Rdrift＋RJ-FET＋Rch＋RN＋
RDS(ON)＝Rsub＋Rdrift＋Rch＋RN＋・・・方程式3-（1）
如果是VDSS＝600V，顺序为Rdrift >> Rch > RJ-FET，RN+，Rsub和RDS(ON)取决于Rdrift
如果是VDSS＝30V，顺序为Rch >> Rdrift > RN+，Rsub。沟槽MOS结构的精细图形化可以最大限度降低RDS(ON)对Rch的依赖性
第Ⅲ章：晶体管
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