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二极管
晶体管
通用逻辑IC
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IGBT的性能改进：垂直设计的发展
下载“第Ⅲ章：晶体管” (PDF:2.0MB)
如图3-15（a）所示，IGBT的垂直设计一直在发展。
从PT结构开始，随着薄晶片的使用，薄型PT（通常称为“场截止”）结构正在成为主流。（栅极结构与MOSFET相同。）
PT型的VCE(sat)特性是具有高温和室温条件下交叉的电流值（称为“Q点”）。
由于高温VCE(sat)在NPT型（如MOSFET）中始终很高，因此即使在并联操作时也更容易平衡集电极电流。
注：VCE(sat)特性-集电极电流正向流动时的压降。
第Ⅲ章：晶体管
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