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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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SiC肖特基势垒二极管

SiC肖特基势垒二极管(SBD)具有高反向电压额定值。除了提供具有较短反向恢复时间(trr)的SBD外,东芝还提供650V SBD,它具有结型肖特基势垒(JBS)结构,可提供开关电源所需的低泄漏电流(Ir)和高浪涌电流能力。这些器件有助于提高开关电源的效率。

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All package dimensions are guaranteed in millimeters as mentioned on datasheet. Package dimension in inches is round to 2 significant digits converted with 1mm=0.0393701inch.

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

低开关损耗SiC肖特基势垒二极管(SBD)
利用碳化硅,实现了一种高耐压、低开关损耗(低反向恢复电荷)的器件。
Si材料和SiC材料关断波形
助力高输出电源的高效率和低损耗
与FRD相比,恢复损耗大大降低:快速恢复二极管
改进JBS结构以降低泄漏电流和提高浪涌电流能力
采用改进的JBS结构,降低了SBD的泄漏电流和提高了浪涌电流能力

二极管/SiC肖特基二极管

适用于电源电路的SiC器件
SiC肖特基二极管(SBD)实现了使用Si肖特基二极管无法实现的高的SBD击穿电压,并且显著降低了使用p-n结二极管无法实现的反向恢复时间(电荷),比如Si-FRD(快速恢复二极管)。

二极管/SiC肖特基二极管

SiC SBD的高耐压(反向电压)特性
实现了一种高击穿电压器件,其介电击穿场强比硅SBD高近10倍。

二极管/SiC肖特基二极管

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无桥PFC电源基础仿真电路

1.6kW,80+白金级高效服务器AC-DC电源
该参考设计提供了使用半无桥/隔离相移全桥的1.6kW 80Plus白金级电源的设计指南,数据和其他内容。

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