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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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绝缘栅双极晶体管(IGBT)和栅极注入增强型晶体管(IEGT)是通过与MOSFET相同的方式控制栅极和发射极之间的电压,接通和关断集电极和发射极之间电源的器件。
东芝IGBT和IEGT可以用于家用电器及基础设施的各种应用。