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SiC MOSFET
宽禁带功率半导体充分利用东芝第二代碳化硅（SiC）器件结构的优势，为高电压产品带来了极具吸引力的优势。与传统的硅（Si）功率半导体相比，东芝的SiC MOSFET具有更高的可靠性、在高温环境下的出色工作、高速开关和低导通电阻的特性。SiC MOSFET适用于大功率且高效的各类应用，包括工业电源、太阳能逆变器和UPS。
产品线
（除非另有规定，@Ta＝25℃）
| 产品代 | 器件型号 | 封装 | 绝对最大额定值 | 电气特性 | 库存查询与购买 | |||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 漏极-源极电压 VDSS（V） |
栅极-源极电压 VGSS（V） |
漏极 电流（DC） ID（A） |
漏极-源极导通电阻 RDS(ON) 典型值（mΩ） |
栅极阀值 电压 Vth（V） |
总栅极电荷 Qg 典型值 （nC） |
栅极- 漏极 电荷 Qgd 典型值 （nC） |
输入电容 Ciss 典型值 （pF） |
二极管正向电压 |
||||
| @Tc＝25°C | @VGS＝18V | @VDS＝10V | @VDS＝400V，f＝100kHz | @VGS＝-5V | ||||||||
| 第3代 | TW015N120C | TO-247 | 1200 | -10至25 | 100 | 15 | 3.0至5.0 | 158 | 23 | 6000 | -1.35 |
|
| TW030N120C | 60 | 30 | 82 | 13 | 2925 |  |
||||||
| TW045N120C | 40 | 45 | 57 | 8.9 | 1969 | |
||||||
| TW060N120C | 36 | 60 | 46 | 7.8 | 1530 | |
||||||
| TW140N120C | 20 | 140 | 24 | 4.2 | 691 | |
||||||
| TW015N65C | 650 | 100 | 15 | 128 | 19 | 4850 | |
|||||
| TW027N65C | 58 | 27 | 65 | 10 | 2288 | |
||||||
| TW048N65C | 40 | 48 | 41 | 6.2 | 1362 | |
||||||
| TW083N65C | 30 | 83 | 28 | 3.9 | 873 | |
||||||
| TW107N65C | 20 | 107 | 21 | 2.3 | 600 | |
||||||
| 第2代 | TW070J120B | TO-3P（N） | 46 | 70 @VGS＝20V |
4.2至5.8 | 67 | 25 | 1680 @VDS＝400V，f＝100kHz |
|
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推荐产品
第3代碳化硅（SiC）MOSFET
东芝第三代碳化硅（SiC）MOSFET推出电压分别为650V和1200V的两款系列产品。与第二代产品一样，东芝新一代MOSFET内置了与SiC MOSFET内部PN结二极管并联的SiC肖特基势垒二极管（SBD），其正向电压（VF）低至-1.35V（典型值），以抑制RDS(on) 波动，从而提高可靠性。此外，与第2代产品相比，东芝先进的SiC工艺[1]显著改善了单位面积导通电阻RonA，以及代表开关特性的性能指标Ron*Qgd。此外，极驱动电路设计简单，可防止开关噪声引起的故障。
东芝第三代SiC MOSFET拥有更低的功耗，支持各种高功率密度应用，如开关电源（数据中心服务器、通信设备等）、不间断电源（UPS）、光伏逆变器、电动汽车充电站等。
东芝第三代SiC MOSFET拥有更低的功耗，支持各种高功率密度应用，如开关电源（数据中心服务器、通信设备等）、不间断电源（UPS）、光伏逆变器、电动汽车充电站等。
第二代SiC MOSFET／IGBT开关损耗比较
东芝的TW070J120B 1200V SiC MOSFET具有低导通电阻，低输入电容和低总栅极电荷总量的特性，因而可实现高开关速度并降低功耗。
第二代SiC MOSFET的特性
由于碳化硅（SiC）的介电击穿强度大约是硅（Si）的10倍，因此SiC功率器件可以提供高耐压和低导通电阻。
使用SiC MOSFET的好处是什么?
与Si IGBT相比，东芝SiCMOS实现了低导通电阻和高速开关。
使用东芝的SiC MOSFET开启电源的新大门
SiC MOSFET支持小型化、低损耗电源
3相AC 400V输入PFC转换器参考设计
使用第二代SiC MOSFET提高电源系统效率
5kW隔离式双向DC-DC转换器参考设计
使用第二代SiC MOSFET提高电源系统效率
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