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宽禁带功率半导体充分利用东芝第二代碳化硅(SiC)器件结构的优势,为高电压产品带来了极具吸引力的优势。与传统的硅(Si)功率半导体相比,东芝的SiC MOSFET具有更高的可靠性、在高温环境下的出色工作、高速开关和低导通电阻的特性。SiC MOSFET适用于大功率且高效的各类应用,包括工业电源、太阳能逆变器和UPS。
新器件采用了可提高SiC MOSFET可靠性的东芝第二代芯片设计[1],实现了低输入电容、低栅极输入电荷以及低漏源导通电阻。
[1]2020年7月30日东芝新闻发布:“可提高碳化硅(SiC)MOSFET可靠性的东芝新器件结构问世”
(除非另有说明,@Ta=25℃)
器件型号 |
封装 |
绝对最大额定值 |
电气特性 |
|||||
---|---|---|---|---|---|---|---|---|
VDSS(V) |
ID(A) |
RDS(ON)典型值(mΩ) |
Vth(V) |
Qg典型值(nC) |
Ciss典型值(pF) |
VDSF典型值(V) |
||
TO-3P(N) |
1200 |
36.0 |
70 |
4.2至5.8 |
67 |
1680 |
-1.35 |
注:
VDSS:漏源电压, ID:漏极电流(DC)@Tc=25℃,RDS(ON):漏源导通电阻@VGS = 20V,
Vth:栅极电压阀值@VDS=10V,ID=20mA,Qg:栅极电荷总量,
Ciss:输入电容,VDSF:二极管正向电压@ IDR=10A,VGS=-5V
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