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SiC MOSFET

宽禁带功率半导体充分利用东芝第二代碳化硅(SiC)器件结构的优势,为高电压产品带来了极具吸引力的优势。与传统的硅(Si)功率半导体相比,东芝的SiC MOSFET具有更高的可靠性、在高温环境下的出色工作、高速开关和低导通电阻的特性。SiC MOSFET适用于大功率且高效的各类应用,包括工业电源、太阳能逆变器和UPS。

1200V SiC MOSFET TW070J120B

TO-3P(N)

新器件采用了可提高SiC MOSFET可靠性的东芝第二代芯片设计[1],实现了低输入电容、低栅极输入电荷以及低漏源导通电阻。

[1]2020年7月30日东芝新闻发布:“可提高碳化硅(SiC)MOSFET可靠性的东芝新器件结构问世”

(除非另有说明,@Ta=25℃)

器件型号

封装

绝对最大额定值

电气特性

VDSS(V)

ID(A)

RDS(ON)典型值(mΩ)

Vth(V)

Qg典型值(nC)

Ciss典型值(pF)

VDSF典型值(V)

TW070J120B

TO-3P(N)

1200

36.0

70

4.2至5.8

67

1680

-1.35

注:
VDSS:漏源电压, ID:漏极电流(DC)@Tc=25℃,RDS(ON):漏源导通电阻@VGS = 20V,
Vth:栅极电压阀值@VDS=10V,ID=20mA,Qg:栅极电荷总量,
Ciss:输入电容,VDSF:二极管正向电压@ IDR=10A,VGS=-5V

SiC MOSFET有助于降低工业类应用中的功耗
东芝的TW070J120B 1200V SiC MOSFET具有低导通电阻、低输入电容和低栅极电荷总量的特性,因而可实现高速开关并降低功耗。
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