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SiC MOSFET
宽禁带功率半导体充分利用东芝第二代碳化硅（SiC）器件结构的优势，为高电压产品带来了极具吸引力的优势。与传统的硅（Si）功率半导体相比，东芝的SiC MOSFET具有更高的可靠性、在高温环境下的出色工作、高速开关和低导通电阻的特性。SiC MOSFET适用于大功率且高效的各类应用，包括工业电源、太阳能逆变器和UPS。
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1200V SiC MOSFET TW070J120B
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新器件采用了可提高SiC MOSFET可靠性的东芝第二代芯片设计[1]，实现了低输入电容、低栅极输入电荷以及低漏源导通电阻。
[1]2020年7月30日东芝新闻发布：“可提高碳化硅（SiC）MOSFET可靠性的东芝新器件结构问世”
（除非另有说明，@Ta＝25℃）
器件型号 |
封装 |
绝对最大额定值 |
电气特性 |
|||||
|---|---|---|---|---|---|---|---|---|
VDSS（V） |
ID（A） |
RDS（ON）典型值（mΩ） |
Vth（V） |
Qg典型值（nC） |
Ciss典型值（pF） |
VDSF典型值（V） |
||
TO-3P(N) |
1200 |
36.0 |
70 |
4.2至5.8 |
67 |
1680 |
-1.35 |
|
注：
VDSS：漏源电压， ID：漏极电流（DC）@Tc＝25℃，RDS（ON）：漏源导通电阻@VGS = 20V，
Vth：栅极电压阀值@VDS＝10V，ID＝20mA，Qg：栅极电荷总量，
Ciss：输入电容，VDSF：二极管正向电压@ IDR＝10A，VGS＝-5V
SiC MOSFET有助于降低工业类应用中的功耗
东芝的TW070J120B 1200V SiC MOSFET具有低导通电阻、低输入电容和低栅极电荷总量的特性，因而可实现高速开关并降低功耗。
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