SiC MOSFET模块
采用新型材料碳化硅（SiC）的功率半导体在高速开关性能方面优于目前占据主流的硅（Si）功率半导体（IGBT），以及在高温环境中使用的硅（Si）功率半导体。我们满足了工业应用设备（如轨道车辆用逆变器和转换器以及光伏逆变器）对于更高额定电压和更大电流容量的需求。并且，我们提供最适合低损耗和小型化应用的器件。
技术文章
MG800FXF2YMS3（3300V／800A 2in1）
新产品采用具有高度安装兼容性的iXPLV（智能软包装低压）封装，满足了轨道车辆逆变器和转换器以及可再生能源发电系统等工业应用对于高效紧凑型设备的需求。
MG600Q2YMS3（1200V／600A 2in1）
新模块与广泛使用的硅（Si）IGBT模块具有安装兼容性。 它们的低损耗特性有助于工业转换器和逆变器，以及可再生能源发电系统等工业设备的更高效率和小型化。
MG400V2YMS3（1700V／400A 2in1）
新模块与广泛使用的硅（Si）IGBT 模块具有安装兼容性。它们的低损耗特性有助于轨道车辆的转换器和逆变器，以及可再生能源发电系统等工业设备的更高效率和小型化。
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Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.
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