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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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SiC MOSFET模块
采用新型材料碳化硅（SiC）的功率半导体在高速开关性能方面优于目前占据主流的硅（Si）功率半导体（IGBT），以及在高温环境中使用的硅（Si）功率半导体。我们满足了工业应用设备（如轨道车辆用逆变器和转换器以及光伏逆变器）对于更高额定电压和更大电流容量的需求。并且，我们提供最适合低损耗和小型化应用的器件。
技术文章
MG800FXF2YMS3（3300 V/800 A 2in1）
新产品采用具有高度安装兼容性的iXPLV（智能软包装低压）封装，满足了轨道车辆逆变器和转换器以及可再生能源发电系统等工业应用对于高效紧凑型设备的需求。
MG250YD2YMS3（2200 V／250 A 2in1）
新模块与广泛使用的硅 (Si) IGBT 模块具有安装兼容性。它们的低损耗特性满足了工业设备（例如光伏发电系统和储能系统）对更高效率和减小尺寸的需求。
MG400V2YMS3（1700 V/400 A 2in1）
新模块与广泛使用的硅（Si）IGBT 模块具有安装兼容性。它们的低损耗特性有助于轨道车辆的转换器和逆变器，以及可再生能源发电系统等工业设备的更高效率和小型化。
MG600Q2YMS3（1200 V/600 A 2in1）
新模块与广泛使用的硅（Si）IGBT模块具有安装兼容性。 它们的低损耗特性有助于工业转换器和逆变器，以及可再生能源发电系统等工业设备的更高效率和小型化。
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