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About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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采用新型材料碳化硅(SiC)的功率半导体在高速开关性能方面优于目前占据主流的硅(Si)功率半导体(IGBT),以及在高温环境中使用的硅(Si)功率半导体。我们满足了工业应用设备(如轨道车辆用逆变器和转换器以及光伏逆变器)对于更高额定电压和更大电流容量的需求。并且,我们提供最适合低损耗和小型化应用的器件。
MG800FXF2YMS3
新产品采用具有高度安装兼容性的iXPLV(智能软包装低压)封装,满足了轨道车辆逆变器和转换器以及可再生能源发电系统等工业应用对于高效紧凑型设备的需求。
MG600V2YMS3(1200V/600A双路,开发中)/MG400V2YMS3(1700V/400A双路,开发中)
我们使用新开发的SiC MOSFET/SBD芯片开发模块,该芯片在采用行业标准封装的同时实现了低寄生电感。 这些模块适用于光伏逆变器,工业逆变器,轨道车辆的逆变器和转换器等,并通过高速开关和低损耗运行助力工业设备的小型化和轻量化。
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