这些光耦适合驱动IGBT/MOSFET栅极。该产品系列包括多种产品,包括具有内置过电流保护功能和6.0A输出电流的产品。因此,可以根据IGBT/MOSFET的栅极容量来选择最合适的产品。共模瞬态耐久性最高等级为40kV/μs,可用于逆变器、伺服系统等噪声环境恶劣的工业应用。
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Package Size
W | : | 9.66 mm 0.38 inch |
---|---|---|
L | : | 10.16 mm 0.40 inch |
H | : | 3.65 mm 0.14 inch |
All package dimensions are guaranteed in millimeters as mentioned on datasheet. Package dimension in inches is round to 2 significant digits converted with 1mm=0.0393701inch.
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About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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