* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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下载“第Ⅲ章:晶体管” (PDF:2.0MB)
作为MOSFET*1的一个特性,如果它在一定的能量、漏极电流ID范围内,并且低于额定结温Tch,则即使超过了额定电压VDSS,它也不会击穿损坏。
这就是所谓的雪崩能力,允许能量被称为雪崩能量,电流被称为雪崩电流。
*1:图3-10雪崩能力(能量、电流)测试电路、波形及计算公式