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下载“第Ⅲ章:晶体管” (PDF:2.0MB)
我们将参照图3-6(a)来解释MOSFET的工作原理。
(1)在漏极为正极的漏极和源极之间施加电压。(漏极-源极电压:VDS)
(2)在栅极为正极的栅极和源极之间施加电压。(栅极-源极电压:VGS)
(3)其结果是,电子被吸引到栅极绝缘膜下面的p型层上,部分p型层转变为n型区(p型层中的n型区称为“反转层(沟道)”)。
(4)当这个反转层完成时,MOSFET漏极到源极将形成n层路径。
(n+⇔n-⇔ 反转层(n)⇔ n+)
(5)因此MOSFET在低电阻下工作,漏极电流由外加VDS和负载流决定。
图3-6(a)平面栅极MOSFET的结构和工作原理
图3-6(b)沟槽栅极MOSFET的结构和工作原理