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下载“第Ⅲ章:晶体管” (PDF:2.0MB)
<JFET的操作>
JFET:结型场效应晶体管
(1)在N沟道结型场效应晶体管(图3-3(a))中,当在漏极和源极之间施加电压时,电子从源极流向漏极。
(2)当在栅极和源极之间施加反向偏压时,耗尽层扩大并抑制(1)中的电子流动。(使电子流动的路径变窄)
(3)如果栅极和源极之间的反向偏压进一步增加,耗尽层就会阻塞通道,电子流动停止。
如上所示,施加在栅极和源极之间的电压控制着漏极和源极之间的状态。所以场效应晶体管是电压驱动的器件。
注:电流方向与电子流动方向相反。耗尽层的拓宽机理与二极管相同。