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MOSFET Product lineup

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12V-300V MOSFET

(Drain-Source On-Resistance vs. Gate Switch Charge)
Example of Continual Figure-of-Merit Improvement
(Drain-Source On-Resistance vs. Gate Switch Charge)

Toshiba offers an extensive portfolio of low- to medium-VDSS MOSFETs in various packages ranging from ultra-small packages for small-signal applications to packages with a large current capacity for automotive applications. Toshiba has used each successive generation of trench-gate structures and fabrication processes to steadily reduce the drain-source on-resistance, RDS(ON), of its low-voltage power MOSFETs. In addition, Toshiba has continually optimized MOSFET cell structures to improve the trade-offs between drain-source on-resistance and charge characteristics, which are important figures of merit of MOSFETs for switching applications.

In order to help improve the efficiency of application systems and reduce the heat generated by MOSFETs, Toshiba has continually improved various figures of merit of MOSFETs as shown at right. In addition, Toshiba’s Gen-8 trench MOSFET series, U-MOSVIII-H, generate even lower noise and ringing during switching transitions due to the use of a new cell structure.

<Comparison of Drain-Source Voltage Waveforms during Switch-Off Operation>

Parasitic Snubber Circuitlvmos_3

As switching losses decrease, the relative importance of the output charge loss has increased. In response, Toshiba has released the Gen-9 U-MOSIX-H trench MOSFET series fabricated using the latest process that provides much lower output charge loss than the previous series.

Toshiba’s low-voltage power MOSFETs are perfectly suited to improving the energy efficiency and reducing the size of various applications. Toshiba offers a wide range of MOSFET options, allowing you to select the ones that best meet your application needs.

优点

  • 最新的U-MOSⅨ-H系列

    U-MOSⅨ-H系列专门设计用于同步整流应用,包括二级隔离开关电源。它改进了Qoss*1性能,该性能是同步整流功率损耗的原因之一。U-MOSⅨ-H系列相比于其他半导体供应商*2所提供的最新产品,其Ron•Qoss降低了27%,实现了导通电阻(Ron)和Qoss之间的平衡。因为Ron对于Qoss具有重要影响,所以东芝将通过采用超低Ron的MOSFET扩大U-MOSⅨ-H产品组合,以便扩充U-MOSⅧ-H系列的产品阵容。

◆Comparisons of figures of merit of typical MOSFETs with VDSS=100 V

Conduction and

drive losses

lvmos-highlight_en1

Conduction and

switching losses

lvmos-highlight_en2

Conduction and
output charge losses

lvmos-highlight_en3

TPH3R70APL:U-MOSⅨ-H、VDSS=100V、RDS(ON)max= 3.7mΩ at VGS=10V、SOP Advance

RDS(ON):On-resistance (figure of merit for conduction loss)            As of January 2018 (as surveyed by Toshiba)
Qg:Gate charge (figure of merit for drive loss)
Qsw:Gate switch charge (figure of merit for switching loss)
Qoss:Output charge (figure of merit for output charge loss)

◆Application example for the MOSFET series with VDSS=100 V and comparisons of MOSFET performance in an application system

Due to its outstanding speed, the 100-V MOSFETs of the U-MOSIX-H series are used for various applications, including DC-DC converters, server power supplies, adapters, motors, micro-inverters, and chargers. An example of a full-bridge DC-DC converter is shown below. The following compares Toshiba’s 100-V U-MOSIX-H MOSFET and a MOSFET from another company in terms of the efficiency and the MOSFET device temperature of its primary side. As demonstrated below, Toshiba’s U-MOSIX-H series helps reduce the MOSFET device temperature and improve the power efficiency of the DC-DC converter.

<Comparison of Efficiency of Full-Bridge DC-DC Converter and MOSFET Device Temperature>

lvmos_en4

<Operating conditions>
 Input voltage = 48 V

   output voltage = 24 V

   output power = 25 to 185 W

   operating frequency = 150 kHz

   MOSFET gate drive voltage = 6 V

 <Device evaluated>
 TPH3R70APL:RDS(ON)max= 3.7mΩ at VGS=10V
                             SOP Advance

 Circle Device compared with the TPH3R70APL

Efficiency

lvmos-highlight_en5

Device Temperature

lvmos-highlight_en6

*At the center of the package mold surface

2)VDSS ≦60V

The Gen-9 U-MOSIX-H series is fabricated with a further optimized cell structure and even smaller process geometries than the Gen-8 MOSFET series featuring low switching and drive losses. Consequently, the U-MOSIX-H series provides much lower output charge and switching losses, which are important for power supply and motor drive applications.

◆Comparisons of figures of merit of typical MOSFETs with VDSS=60V

Conduction and

drive losses

lvmos-highlight_en7

Conduction and

switching losses

lvmos-highlight_en8

Conduction and
output charge losses

lvmos-highlight_en9

TPH1R306PL:U-MOSⅨ-H、VDSS=60V、RDS(ON)max= 1.34mΩ at VGS=10V、SOP Advance

RDS(ON):On-resistance (figure of merit for conduction loss)            As of January 2018 (as surveyed by Toshiba)
Qg:Gate charge (figure of merit for drive loss)
Qsw:Gate switch charge (figure of merit for switching loss)
Qoss:Output charge (figure of merit for output charge loss)

◆Application example for the MOSFET series with VDSS=60V and comparisons of MOSFET performance in an application system

In addition to 100-V MOSFETs, the 60-V MOSFETs of the U-MOSⅨ-H series are used for various applications including the secondary side of AC-DC power supplies for communication equipment and base stations, DC-DC converters for communication equipment, server power supplies, motors, and micro-inverters. Like the 100-V MOSFETs, the 60-V MOSFETs of the U-MOSIX-H series help reduce the MOSFET device temperature and improve the power efficiency of a full-bridge DC-DC converter.

lvmos_en10

<Operating conditions>
 Input voltage=48V

   output voltage=24V

   output power =5~25 A

   operating frequency=160kHz

   MOSFETgate drive voltage=6V

 <Device evaluated:>
 TPH1R306PL:RDS(ON)max= 1.34mΩ at VGS=10V,
                          SOP Advance

 Circle Device compared with the TPH1R306PL

Efficiency

lvmos-highlight_en12

Device Temperature

lvmos-highlight_en11

* At the center of the package mold surface

3)Wide channel and storage temperature ranges of up to 175°C

The MOSFETs of the U-MOSIX-H series, including those with a VDSS of 30 V, are guaranteed at a channel temperature of up to 175°C and over a storage temperature range from -55°C to 175°C.

  • U-MOSVIII-H Series

The high-performance U-MOSVIII-H series combines low on-resistance and high switching speed. The U-MOSVIII-H series helps reduce switching losses in the high-frequency region and therefore improve the efficiency of power supplies. Like the U-MOSIX-H series, the parasitic RC snubber in the U-MOSVIII-H series helps reduce switching noise. In addition, the U-MOSVIII-H series is available with a VDSS of 30 to 250 V and in various packages including the state-of-the-art double-sided-cooling packages (see the table below).

U-MOSⅧ‐H世代とU-MOSⅨ‐H世代のカバレージ比較

Comparison of Coverage of the U-MOSVIII-H and U-MOSIX-H Series

*1:输出电荷(漏-源电荷)

*2:当比较相同封装的40V MOSFET时(截止于2014年12月的东芝调查)

  • U-MOSⅧ-H系列

    U-MOSⅧ-H系列提供业内最广泛的低导通电阻MOSFET产品组合,实现了低导通电阻和电容之间的最佳平衡。凭借其快速操作的特性,U-MOSⅧ-H系列有助于降低开关损耗,这就实现了电源效率的增加。U-MOSⅧ-H系列可提供的VDSS为30至250V,且采用多种封装,包括具有双面冷却功能的先进封装形式。

  • 低驱动电压和低Ron

    东芝能够通过最一流的工艺实现低的Ron(即便是低电压产品)和低功耗特性,从而跟上系统功率下降的趋势。

lvmos1e

  • 12-300V MOSFET的封装趋势

    Packaging Trends for 12-300V MOSFETs

    东芝为各种用途提供不同的封装,从非常小的封装(比如0.8 x 0.6mm)到高散热封装。

  • Semi power的封装特点

    Packaging feature for type of semi power

    当SOT-23F和SOT-23安装面积相同时,SOT-23F的板上芯片能力高于SOT-23。因此,SOT-23F的性能高于SOT-23。

  • Thermally Enhanced DSOP Advance Package

    1. The DSOP Advance package efficiently dissipates heat from the metal plates on the top and bottom surfaces.

        ⇒ The DSOP Advance package provides a higher current capacity than the conventional package with the same size and therefore helps save PCB space and reduce the system size.

    2. The DSOP Advance package is footprint-compatible with the SOP Advance package.

        ⇒ MOSFETs in the DSOP Advance package serve as easy replacements for those in the SOP Advance package without the need for modifying the PCB layout.

    3. The DSOP Advance package has lower resistance.

    DSOP Advance PackageDouble Side Cooling Package

  • 功率MOSFET的封装趋势

    • 热量从上下表面同时散发
    • 上金属板连接至源极
      (源极不能作为电极进行导电。它用于散热目的。)
    • 与现有的SOP Advance具有相同的封装尺寸
      (SOP Advance可以用新封装代替,而不需要修改现有的PCB布板)

  • 大电流的封装

    • 铜板压接的方式从而增加了电流密度和Ron
    • 大电流封装的面积与通用封装相等

    Packaging for high current

    大电流型 通用型
    TO-220SM(W) TO-220SM(D2PAK)
    DPAK+ 新型PW-Mold封装
    SOP Advance SOP-8

    TO-220SM(W)、DPAK+、SOP Advance

产品范围

U-MOSⅧ-H和U-MOSⅨ-H系列相比于其它系列,可提供更广泛的R(DS)ON和VDSS,从而能满足各种应用需求。

产品阵容

文档

白皮书

Whitepaper
名称 概述 发布日期
支持功率电子的器件发展和产品安装、电路和应用的技术扩展 8/2017
通过MOSFET效率和整合优化电源设计 8/2017
双面冷却封装DSOP Advance:功率MOSFET的热传导创新 8/2017
无绳电动工具:提供高输出功率、扩展操作和较小的外形尺寸 9/2017

应用说明

Application note
名称 概述 发布日期
提供基于仿真结果的提示和技巧,帮助降低半导体分立器件的芯片温度 01/2018
MOSFET漏极与源极之间的高耦合度会引发问题,此资料介绍产生这种现象的原因及其对策 12/2017
介绍雪崩现象的产生机理,阐述它的耐久性及对策 12/2017
介绍了如何降低半导体分立器件芯片温度 12/2017
介绍如何计算半导体分立器件的温度 12/2017
讨论MOSFET安全操作区域的温度降额 12/2017
当MOSFET漏极与源极间电压迅速上升时,MOSFET可能出现故障并导通,此资料解释其机理和对策 12/2017
介绍了平面、沟槽和超级结功率MOSFET 11/2016
介绍了功率MOSFET的绝对最大额定值、热阻抗和安全工作区域 11/2016
介绍了规格书中所示的电气特性 11/2016
介绍选择功率MOSFET的方法、温度特性、导线和寄生振荡的影响、雪崩耐用性,缓冲电路等 11/2016
介绍了热等效电路、通道温度计算的例子和散热器附件的考虑。 2/2017
介绍了MOSFET开关应用的栅极驱动电路设计指南,并提供了栅极驱动电路的举例。 8/2017
介绍了并联MOSFET中的电流不平衡和寄生振荡机理 8/2017
介绍了MOSFET在开关应用中的振荡机理 8/2017

目录

Catalog
名称 概述 发布日期
介绍MOSFET产品阵容 12/2017
介绍小型封装器件产品阵容(MOSFET/BJT/二极管/线性IC/逻辑器件/射频器件) 12/2017
根据封装介绍功率器件与小信号MOSFET产品阵容 3/2016

视频


产品

VDSS
(V)
RDS(ON)
(mΩ)
TSON Advance SOP Advance SOP-8 DSOP Advance TO-220 TO-220SIS DPAK D2PAK
30 10 - 20 TPN11003NL TPH11003NL

5 - 10 TPN8R903NL
TPN6R303NC
TPN6R003NL
TPN5R203PL
TPH8R903NL
TPH6R003NL
TP89R103NL
TP86R203NL
3 - 5 TPN4R303NL
TPN4R203NC
TPH4R803PL
TPH4R003NL
TPH3R203NL
TK3R3E03GL
1 - 3 TPN2R903PL
TPN2R703NL
TPN2R503NC
TPN2R203NC
TPN1R603PL
TPH3R003PL
TPH2R903PL
TPH2R003PL

TPH1R403NL
< 1 TPHR9203PL
TPHR9003NL
TPHR9003NC
TPHR6503PL
TPWR8503NL
TPWR6003PL
40 10 - 20
5 - 10 TPN7R504PL TPH7R204PL
TPH6R004PL
3 - 5 TPN3R704PL TPH3R704PC
TPH3R704PL
TK3R1E04PL TK3R1A04PL TK3R1P04PL
1 - 3 TPN2R304PL TPH2R104PL
TPH1R204PB
TPH1R204PL
< 1 TPHR8504PL TPWR8004PL
45 1 - 3 TPN2R805PL TPH2R805PL
TPH1R405PL
TPH1R005PL
< 1 TPW1R005PL
60 20 - 50 TPN22006NH
10 - 20 TPN14006NH
TPN11006NL
TPN11006PL
TPH14006NH
TPH11006NL
TK30E06N1
TK40E06N1
TK30A06N1
TK40A06N1
5 - 10 TPN7R506NH
TPN7R006PL
TPH9R506PL
TPH7R506NH
TPH7R006PL
TPH5R906NH
TK8R2E06PL
TK58E06N1
TK5R1E06PL
TK8R2A06PL
TK58A06N1
TK5R3A06PL
TK6R7P06PL
3 - 5 TPN4R806PL TPH4R606NH
TPH3R506PL
TK4R3E06PL
TK3R2E06PL
TK4R3A06PL
TK3R3A06PL
TK4R4P06PL TK4R8G06PL
1 - 3 TPH2R306NH
TPH2R506PL
TPH1R306PL
TPH1R306P1
TPW1R306PL TK100E06N1 TK100A06N1 TK2R9G06PL
75 1 - 3 TPH2R608NH TPW2R508NH
80 30 - 50 TPN30008NH
10 - 20 TPN13008NH TPH12008NH TK35E08N1 TK35A08N1
5 - 10 TPH8R008NH TK46E08N1 TK46A08N1
3 - 5 TPH4R008NH TPW4R008NH TK72E08N1
TK100E08N1
TK72A08N1
TK100A08N1
100 30 - 50 TPN3300ANH
10 - 20 TPN1600ANH
TPN1200APL
TPH1400ANH TK22E10N1
TK110E10PL
TK22A10N1
TK110A10PL
TK110P10PL
5 - 10 TPH8R80ANH
TPH6R30ANL
TPH5R60APL
TK34E10N1
TK40E10N1
TK7R2E10PL
TK6R4E10PL
TK34A10N1
TK40A10N1
TK7R4A10PL
TK6R7A10PL
TK7R7P10PL
3 - 5 TPH4R50ANH
TPH4R10ANL
TPH3R70APL
TPW4R50ANH
TPW3R70APL
TK65E10N1
TK3R9E10PL
TK100E10N1
TK65A10N1
TK4R1A10PL
TK100A10N1
TK3R2A10PL
TK65G10N1
TK3R7G10PL
1 - 3 TK2R9E10PL
120 10 - 20 TK32E12N1 TK32A12N1
5 - 10 TK42E12N1
TK56E12N1
TK42A12N1
TK56A12N1
3 - 5 TK72E12N1 TK72A12N1
150 50 - 100 TPN5900CNH TPH5900CNH
20 - 50 TPH3300CNH
10 - 20 TPH1500CNH TPW1500CNH
200 100 - 200 TPN1110ENH TPH1110ENH
50 - 100 TPH6400ENH
20 - 50 TPH2900ENH TPW2900ENH
250 200 - 300 TPN2010FNH TPH2010FNH
100 - 200 TPH1110FNH
50 - 100 TPH5200FNH TPW5200FNH
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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.