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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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查找您下一个设计所需要的一切。只需选择一个应用,然后单击以查看框图,即可找到我们的半导体解决方案。

U-MOSⅨ-H系列是提高开关电源效率的理想MOSFET

U-MOSⅨ-H系列利用卓越的高速性能,为各种拓扑结构的开关电源提供低损耗MOSFET。当TPH3R70APL和TPH1R306PL用于移相全桥DC-DC转换器的一次和二次侧时,TPH3R70APL和TPH1R306PL的效率等于或优于整个输出电流范围内的最具竞争力的产品(最大效率:95.83 %)。U-MOSⅨ-H系列用于各种应用,包括用于基站的DC-DC转换器、服务器电源、适配器(充电器)、无刷电机和微型逆变器。

U-MOSⅨ-H系列是提高开关电源效率的理想MOSFET
  • 工作条件
    输入电压=48V
    输出电压=24V
    输出电流=5至25A
    工作频率=160kHz
    MOSFET栅极电压=6V
  • 器件评估:
    TPH1R306PL:VDSS=60V,RDS(ON)最大值=1.34mΩ @VGS=10V,SOP Advance

  器件与TPH1R306PL相比

效率
器件温度

(我们在2018年1月的调查)

东芝的MOSFET用于全桥DC-DC转换器的一次侧和二次侧时,其效率和器件温度特性均优于同类竞争产品。当比较效率时,在整个输出电流范围内将保持高效率,当比较器件温度时,温升减少5°C或更多。

请参阅以下资料,以了解有关改善损耗品质因数的详情。

U-MOSⅨ-H系列MOSFET

电路仿真

使用开关电源选型工具库(SMPS Lib.),您可以根据实际需求选择和下载电源单元的各种基本拓扑,以便在仿真环境中验证MOSFET的性能。 

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