U-MOSⅨ-H系列大幅提高了代表损耗的品质因数
U-MOSⅨ-H系列融合了卓越的沟道工艺和封装技术，能提供业内一流的性能。U-MOSⅨ-H系列采用最新工艺和优化的单元结构制造，大幅改进了RDS(ON)×Qg，RDS(ON)×QSW和RDS(ON)×QOSS，这些是MOSFET的重要品质因数。
因此，U-MOSⅨ-H系列可显著降低主要损耗，包括导通损耗、驱动损耗、开关损耗和输出电荷损耗，这有助于提高电源系统的效率和降低MOSFET器件的温度。
TPH1R306PL：U-MOSⅨ-H、VDSS=60V、RDS(ON)最大值＝1.34mΩ @ VGS＝10V、SOP Advance
RDS(ON)：导通电阻（导通损耗的品质因数）
Qg：栅极电荷（驱动损耗的品质因数）
QSW：栅极开关电荷（开关损耗的品质因数）
QOSS：输出电荷（输出电荷损耗的品质因数）
截至2018年1月（东芝调查）
当U-MOSⅨ-H 60V系列的TPH1R306PL与竞争对手的类似产品比较时，与开关损耗有关的RDS(ON)×QSW降低25%，与输出电荷损耗有关的RDS(ON)×QOSS降低32%。
TPH3R70APL：U-MOSⅨ-H、VDSS=100V、RDS(ON)最大值＝3.7mΩ @ VGS=10V、SOP Advance
RDS(ON)：导通电阻（导通损耗的品质因数）
Qg：栅极电荷（驱动损耗的品质因数）
QSW：栅极开关电荷（开关损耗的品质因数）
QOSS：输出电荷（输出电荷损耗的品质因数）
截至2018年1月（东芝调查）
当U-MOSⅨ-H 100V系列的TPH3R70APL与竞争对手的类似产品比较时，与开关损耗有关的RDS(ON)×QSW降低15%，与输出电荷损耗有关的RDS(ON)×QOSS降低14%。
U-MOSⅨ-H系列MOSFET
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