-
My ToshibaSemicon
- 网站首页 查看
-
半导体 查看
-
应用
-
产品
＊
: Products list (parametric search)＊
: Products list (parametric search)＊
: Products list (parametric search)＊
: Products list (parametric search)分立半导体
二极管
晶体管
通用逻辑IC
模拟器件
＊
: Products list (parametric search)＊
: Products list (parametric search)＊
: Products list (parametric search)＊
: Products list (parametric search) -
设计与开发
-
知识库
- 购买 查看
-
- 存储产品 查看
- 公司信息 查看
- 型号搜索
- 交叉搜索
- 关键词搜索
- 参数搜索
- 库存查询与购买
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
请输入3个以上字符
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
请输入3个以上字符
U-MOSⅨ-H系列大幅提高了代表损耗的品质因数
U-MOSⅨ-H系列融合了卓越的沟道工艺和封装技术，能提供业内一流的性能。U-MOSⅨ-H系列采用最新工艺和优化的单元结构制造，大幅改进了RDS(ON)×Qg，RDS(ON)×QSW和RDS(ON)×QOSS，这些是MOSFET的重要品质因数。
因此，U-MOSⅨ-H系列可显著降低主要损耗，包括导通损耗、驱动损耗、开关损耗和输出电荷损耗，这有助于提高电源系统的效率和降低MOSFET器件的温度。
TPH1R306PL：U-MOSⅨ-H、VDSS=60V、RDS(ON)最大值＝1.34mΩ @ VGS＝10V、SOP Advance
RDS(ON)：导通电阻（导通损耗的品质因数）
Qg：栅极电荷（驱动损耗的品质因数）
QSW：栅极开关电荷（开关损耗的品质因数）
QOSS：输出电荷（输出电荷损耗的品质因数）
截至2018年1月（东芝调查）
当U-MOSⅨ-H 60V系列的TPH1R306PL与竞争对手的类似产品比较时，与开关损耗有关的RDS(ON)×QSW降低25%，与输出电荷损耗有关的RDS(ON)×QOSS降低32%。
TPH3R70APL：U-MOSⅨ-H、VDSS=100V、RDS(ON)最大值＝3.7mΩ @ VGS=10V、SOP Advance
RDS(ON)：导通电阻（导通损耗的品质因数）
Qg：栅极电荷（驱动损耗的品质因数）
QSW：栅极开关电荷（开关损耗的品质因数）
QOSS：输出电荷（输出电荷损耗的品质因数）
截至2018年1月（东芝调查）
当U-MOSⅨ-H 100V系列的TPH3R70APL与竞争对手的类似产品比较时，与开关损耗有关的RDS(ON)×QSW降低15%，与输出电荷损耗有关的RDS(ON)×QOSS降低14%。
U-MOSⅨ-H系列MOSFET
相关信息
购买、样品、及IC可靠性查询
库存查询与购买
请输入3个以上字符
| 器件型号 | Authorized Distributor | Stock Quantity | Date | Shopping Cart |
|---|
Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.