采用最新工艺的P通道MOSFET系列
东芝的MOSFET采用卓越的沟道技术实现了低导通电阻特性和从1.2V到10V的宽驱动电压范围。特别值得一提的是，最新一代P沟道7工艺与旧一代工艺相比成功降低Ron约70%，这是MOSFET的重要优势。
最新P沟道工艺MOSFET
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