- 型号搜索
- 交叉搜索
- 关键词搜索
- 参数搜索
- 库存查询与购买
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
请输入3个以上字符
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
请输入3个以上字符
采用最新工艺的P通道MOSFET系列
东芝的MOSFET采用卓越的沟道技术实现了低导通电阻特性和从1.2V到10V的宽驱动电压范围。特别值得一提的是，最新一代P沟道7工艺与旧一代工艺相比成功降低Ron约70%，这是MOSFET的重要优势。
最新P沟道工艺MOSFET
相关信息
购买、样品、及IC可靠性查询
库存查询与购买
请输入3个以上字符
| 器件型号 | Authorized Distributor | Stock Quantity | Date | Shopping Cart |
|---|
Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.