通过缓冲电路降低开关噪声(低尖峰技术)

TPH1R306P1(60V)

东芝不断改进各种性能,以提高应用设备的效率,减少MOSFET发热。在第8代MOSFET(U-MOSⅧ-H系列)中,除了这些改进外,还采用了新的单元结构,以降低开关过程中的噪声和振铃。此外,如下图所示,第9代U-MOSⅨ-H系列提供一系列低尖峰型和高效型产品,前者具有优化的缓冲电路常数。

开关波形比较(VDSS=60V型)

TPH1R306PL,TPH1R306P1开波形

R负载开关波形

VDD=30V,ID=50A
RG=4.7Ω,RGS=4.7Ω
电阻负载
Ta=25℃

TPH1R306PL,TPH1R306P1波形

L负载开关波形(trr

VDD=30V
IDR=25A
di/dt=220A/μs
感性负载
Ta=25℃

东芝的TPH1R306P1是U-MOSⅨ-H系列追求高效率的低尖峰低噪声产品。与传统的TPH1R306PL比较,对于R负载开关波形,VDS的尖峰噪声减小约13%,对于L负载开关波形((Trr),VDS的尖峰噪声减小约为35%。

U-MOSⅧ-H/U-MOSⅨ-H系列MOSFET

电路仿真

利用开关电源选型工具库(SMPS Lib.),您可以根据实际需求选择和下载电源单元的各种基本拓扑,以便在仿真环境中验证MOSFET的性能。 

相关信息

联系我们

技术咨询

联系我们

联系我们

常见问题

常见问题(FAQ)

购买、样品、及IC可靠性查询

库存查询与购买

keyword:

Disclaimer for External Link
Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.
在新窗口打开