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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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DSOP Advance,热增强的双面散热封装,提高了大电流应用的电源效率

DSOP Advance在封装的顶部有一个金属板(E-Pad),用于芯片散热。这种金属板改进了散热,将减少高电流导通期间MOSFET温度的增加,有助于提高电源电路的功率密度和效率。与相同封装尺寸的SOP Advance相比,DSOP Advance的热阻Rth(ch-c)降低了45%。由于DSOP Advance的封装样式与传统的SOP Advance相同,因此可以在不改变印刷电路板布局的情况下进行替换。

DSOP Advance,热增强的双面散热封装,提高了大电流应用的电源效率
器件温度

用TPWR8503NL代替东芝的30V MOSFET TPHR9003NL可降低MOSFET温度10.3°C。当安装散热片时,器件温度最大降低26℃。

模拟散热结果(SOP Advance vs. DSOP Advance)

SOP Advance和DSOP Advance的模拟散热比较结果

下图显示了SOP Advance和DSOP Advance的模拟散热比较结果。上部为散热条件的侧视图,下部为散热条件的俯视图。双面散热式DSOP Advance比单面散热式SOP Advance降低MOSFET温度约40%。

DSOP Advance封装的MOSFET

电路仿真

利用开关电源选型工具库(SMPS Lib.),您可以根据实际需求选择和下载电源单元的各种基本拓扑,以便在仿真环境中验证MOSFET的性能。  

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