DSOP Advance,热增强的双面散热封装,提高了大电流应用的电源效率

DSOP Advance在封装的顶部有一个金属板(E-Pad),用于芯片散热。这种金属板改进了散热,将减少高电流导通期间MOSFET温度的增加,有助于提高电源电路的功率密度和效率。与相同封装尺寸的SOP Advance相比,DSOP Advance的热阻Rth(ch-c)降低了45%。由于DSOP Advance的封装样式与传统的SOP Advance相同,因此可以在不改变印刷电路板布局的情况下进行替换。

DSOP Advance,热增强的双面散热封装,提高了大电流应用的电源效率
器件温度

用TPWR8503NL代替东芝的30V MOSFET TPHR9003NL可降低MOSFET温度10.3°C。当安装散热片时,器件温度最大降低26℃。

模拟散热结果(SOP Advance vs. DSOP Advance)

SOP Advance和DSOP Advance的模拟散热比较结果

下图显示了SOP Advance和DSOP Advance的模拟散热比较结果。上部为散热条件的侧视图,下部为散热条件的俯视图。双面散热式DSOP Advance比单面散热式SOP Advance降低MOSFET温度约40%。

DSOP Advance封装的MOSFET

电路仿真

利用开关电源选型工具库(SMPS Lib.),您可以根据实际需求选择和下载电源单元的各种基本拓扑,以便在仿真环境中验证MOSFET的性能。  

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