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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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SiC MOSFET的特性

由于碳化硅(SiC)的介电击穿强度大约是硅(Si)的10倍,因此SiC功率器件可以提供高耐压和低压降。与相同耐压条件下的Si相比,SiC器件中的单位面积导通电阻更低。
双极IGBT器件,在Si器件中通常用作1000V或更高的高压晶体管。IGBT双极晶体管与两种载流子、电子和空穴共同作用,通过将少数载流子和空穴注入漂移层中,从而降低漂移层的电阻。但是,双极晶体管的缺点是由于少数载流子的积累而在关断时产生的尾电流,这会增加关断损耗。
另一方面,由于SiC MOSFET是单极器件,即便在高压产品中,也只能通过电子工作,因此不会产生尾电流;同时,与Si IGBT相比,其关断损耗也较低。因此,SiC MOSFET能够在高频范围内运行,这对于Si IGBT来讲,是很难实现的。此外,无源元件也有助于设计小型化。

栅极输入电荷和导通电阻
栅极输入电荷和导通电阻

与传统的硅Si IGBT(低栅极输入电荷等)相比,东芝的TW070J120B 1200V SiC MOSFET可提供更高的开关速度。

V<sub>GSS</sub>,V<sub>th</sub>与其他公司产品的比较
VGSS,Vth与其他公司产品的比较

TW070J120B可提供低导通电阻和高栅极电压阀值(Vth)[2],可预防故障。较宽的栅极源极电压(VGSS)[1],支持更简单的栅极驱动设计。

[1] VGSS:-10V至25V(对于TW070J120B)
[2] Vth:4.2V至5.8V(对于TW070J120B)

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