第2代SiC MOSFET/IGBT开关损耗比较


东芝的TW070J120B 1200V SiC MOSFET具有低导通电阻、低输入电容和低栅极电荷总量的特性,因而可实现高速开关并降低功耗。其目标应用为工业设备用400V AC输入AC-DC转换器以及双向DC-DC转换器(如光伏模块和UPS的转换器)。
与1200V硅绝缘栅双极晶体管(IGBT)GT40QR21相比,TW070J120B的关断损耗降低了约80%,开关时间(下降时间)缩短了约70%。此外,对低于20A[1]的电流,新产品还可提供低导通电压。
结合低正向压降的SiC肖特基势垒二极管(SBD)可降低功率损耗。高栅极电压阀值(4.2至5.8V)对于避免意外开启或关闭很实用。

注:
[1] @环境温度25℃

关断损耗比较<sup>[2]</sup>
关断损耗比较[2]
关断波形比较<sup>[2]</sup>
关断波形比较[2]

注:
[2] GT40QR21的测试条件:VCC=800V,IC=10A,RG=47Ω,Ta=25℃,VGE=20V/-5V,
感性负载: L=300μH,TW070J120B的源极和漏极之间的二极管与感性负载并联,用作续流二极管(Free Wheeling Diode:FWD)。
TW070J120B的测试条件:VDD=800V,ID=10A,RG=47Ω,Ta=25℃,VGS=20V/-5V,
感性负载:L=300μH,TW070J120B的源极和漏极之间的二极管与感性负载并联,用作续流二极管(FWD)。.

传导特性比较
传导特性比较

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