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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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第2代SiC MOSFET／IGBT开关损耗比较
东芝的TW070J120B 1200V SiC MOSFET具有低导通电阻、低输入电容和低栅极电荷总量的特性，因而可实现高速开关并降低功耗。其目标应用为工业设备用400V AC输入AC-DC转换器以及双向DC-DC转换器（如光伏模块和UPS的转换器）。
与1200V硅绝缘栅双极晶体管（IGBT）GT40QR21相比，TW070J120B的关断损耗降低了约80%，开关时间（下降时间）缩短了约70%。此外，对低于20A[1]的电流，新产品还可提供低导通电压。
结合低正向压降的SiC肖特基势垒二极管（SBD）可降低功率损耗。高栅极电压阀值（4.2至5.8V）对于避免意外开启或关闭很实用。
注：
[1] @环境温度25℃
![关断损耗比较<sup>[2]</sup>](/content/dam/toshiba-ss-v3/master/en/semiconductor/product/mosfets/articles/sic-mosfets-contribute-to-lower-power-consumption-for-industrial-applications_features_en_1.png)
![关断波形比较<sup>[2]</sup>](/content/dam/toshiba-ss-v3/master/en/semiconductor/product/mosfets/articles/sic-mosfets-contribute-to-lower-power-consumption-for-industrial-applications_features_en_2.png)
注：
[2] GT40QR21的测试条件：VCC＝800V，IC＝10A，RG＝47Ω，Ta＝25℃，VGE＝20V／-5V,
感性负载： L＝300μH，TW070J120B的源极和漏极之间的二极管与感性负载并联，用作续流二极管（Free Wheeling Diode：FWD）。
TW070J120B的测试条件：VDD＝800V，ID＝10A，RG＝47Ω，Ta＝25℃，VGS＝20V／-5V,
感性负载：L＝300μH，TW070J120B的源极和漏极之间的二极管与感性负载并联，用作续流二极管（FWD）。.
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