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SiC MOSFET与Si IGBT的损耗比较

东芝的SiC MOSFET产品,适用于工业设备UPS的AC-DC转换器、太阳能逆变器和双向DC-DC转换器。与1200V Si IGBT(绝缘栅双极晶体管)相比,东芝的1200V SiC MOSFET具有高速开关、低导通电阻的特性,关断损耗可降低约77%[1],开通损耗可降低约76%[2],且在低于25A的漏极电流范围内,可提供低导通电压[3]

关断损耗(SiC MOSFET对比Si IGBT)<sup> [1]</sup>
关断损耗(SiC MOSFET对比Si IGBT) [1]

[1] A公司制造的IGBT测试条件: VCC=800V,IC=10A,Ta=150℃,VGE=20V/-5V,介电负载:L=1mH

东芝SiC MOSFET(TW070J120B)测试条件:VDD=800V,ID=10A,Ta=150℃,VGS=20V/-5V,介电负载:L=1mH

开通损耗(SiC MOSFET对比Si IGBT) <sup>[2]</sup>
开通损耗(SiC MOSFET对比Si IGBT) [2]

[2] A公司制造的IGBT测试条件:外部栅极电阻RG=150Ω。否则,测试条件与[1]的测试条件相同。

东芝SiC MOSFET(TW070J120B)测试条件:外部栅极电阻RG=47Ω;其他情况下,与[1]的测试条件相同。

I<sub>D</sub>,I<sub>C</sub>-V<sub>DS</sub>,V<sub>CE</sub>(SiC MOSFET对比Si IGBT)<sup>[3]</sup>
ID,IC-VDS,VCE(SiC MOSFET对比Si IGBT)[3]

[3] 将我司的SiC MOSFET(TW070J120B)与A公司生产的Si IGBT进行比较

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