- 型号搜索
- 交叉搜索
- 关键词搜索
- 参数搜索
- 库存查询与购买
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
请输入3个以上字符
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
请输入3个以上字符
半导体材料
下载“第Ⅰ章：半导体基础” (PDF:894KB)
硅（Si）和锗（Ge）是众所周知的半导体材料。当它们是纯晶体时，这些物质接近绝缘体（本征半导体），但是掺杂少量的掺杂剂就会导致电阻大幅度下降，变成导体。
根据掺杂剂的种类，可以制成n型或p型半导体。
由几种元素制成的半导体称为化合物半导体，它们与硅半导体等由单一元素制成的不同。具体组合有元素周期表第III组和第V组、第II组和第VI组、第IV组等。
*将第Ⅴ组的磷（P）掺杂到第Ⅳ组的硅（Si）中制成n型半导体。
*将第Ⅲ组的硼（B）掺杂到第Ⅳ组的硅（Si）中制成p型半导体。
