1.6kW 48V输出电信设备电源

该参考设计提供了采用半无桥PFC和隔离相移全桥DC-DC转换器的1.6kW 48V输出电源的设计指南,数据和其他内容。

1.6kW 48V输出电信设备电源的外观照片
简易方框图

特点

  • 1个机架的高效率大功率输出电源
  • 输出电压48V
  • 总效率:94.6%(Vin=230V,100%负载条件下)
  • 外形尺寸:318mm×127mm×43mm (包括PCB下方的基板和散热器上方的顶板)
  • 提供适当的功率器件(MOSFET和SiC二极管)和光耦

说明

输入电压 AC 90V至264V
输出电压 DC 48V
输出功率 0.8kW(AC 100V系统输入),1.6kW(AC 200V系统输入)
电路拓扑 半无桥PFC、移相全桥+同步整流、输出的Oring电路
效率曲线
效率曲线

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

*1:Actual PCB was designed on CR5000BD. The other files were made from CR5000BD file.

*2:The data was generated on CR5000BD.

东芝产品

器件型号 器件目录 搭载部位・数量 说明
功率MOSFET(N沟道500V<VDSS≤700V) PFC・2 N沟道MOSFET,600V,0.125Ω@10V,TO-247,DTMOSⅣ-H
SiC肖特基势垒二极管 PFC・2 650V/8A SiC肖特基势垒二极管,TO-220F-2L
功率MOSFET(N沟道500V<VDSS≤700V) 原边・4 N沟道MOSFET,600V,0.14Ω@10V,TO-247,DTMOSⅣ-H
功率MOSFET(N沟道150V<VDSS≤250V) 副边・8 N沟道MOSFET,200V,0.029Ω@10V,SOP Advance,U-MOSⅧ-H
功率MOSFET(N沟道单60V<VDSS≤150V) Oring・4 N沟道MOSFET,80V,0.00243Ω@10V,SOP Advance,U-MOSⅩ-H
光耦 原边和副边之间的通信・4 光耦(光电IC输出),高速,50Mbps,5000Vrms,SO6L

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

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