1.6 kW 48 V Output Telecommunication Equipment Power Supply

This reference design provides design guide, data and other contents of 1.6 kW 48 V output power supply using semi-bridgeless PFC and isolated phase-shift full-bridge DC-DC converter.

Exterior photo of 1.6 kW 48 V output telecommunication equipment power supply.
Simple block diagram of 1.6 kW 48 V output telecommunication equipment power supply.

Features

  • 1U rack size high efficiency high power output power supply
  • Output voltage 48 V
  • Total efficincy:94.6 % (Vin = 230V at 100 % load condition)
  • Outline size:318 mm x 127 mm x 43 mm (including the base plate under the PCB and top plate covering over the heatsinks)
  • Provides appropriate power devices (MOSFET and SiC diode) and photocouplers totally

Description

Input voltage AC 90 to 264 V
Output voltage DC 48 V
Output power 0.8 kW (AC 100 V system input), 1.6 kW (AC 200 V system input)
Circuit topology Semi-Bridgeless PFC, Phase-Shift Full-Bridge + Synchronous Rectification, Oring Circuit for Output
Efficiency curves of 1.6 kW 48 V output telecommunication equipment power supply.
Efficiency Curves

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

*1:Actual PCB was designed on CR5000BD. The other files were made from CR5000BD file.

*2:The data was generated on CR5000BD.

Used Toshiba Items

Part Number Device Category Portion Usage Description
Power MOSFET (N-ch 500V<VDSS≤700V) PFC・2 N-ch MOSFET, 600 V, 0.125 Ω@10V, TO-247, DTMOSⅣ-H
SiC Schottky barrier diode PFC・2 650 V/8 A SiC Schottky Barrier Diode, TO-220F-2L
Power MOSFET (N-ch 500V<VDSS≤700V) Primary side・4 N-ch MOSFET, 600 V, 0.14 Ω@10V, TO-247, DTMOSⅣ-H
Power MOSFET (N-ch 150V<VDSS≤250V) Secondary side・8 N-ch MOSFET, 200 V, 0.029 Ω@10V, SOP Advance, U-MOSⅧ-H
Power MOSFET (N-ch single 60V<VDSS≤150V) Oring・4 N-ch MOSFET, 80 V, 0.00243 Ω@10V, SOP Advance, U-MOSⅩ-H
Photocoupler (photo-IC output) Communication between primary side and secondary side・4 Photocoupler (photo-IC output), High-speed, 50 Mbps, 5000 Vrms, SO6L

Related Documents

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