TW045N120C

Power SiC MOSFETs

相关参考设计(1)

全部 Data sheet 应用说明 Other

数据表

TW045N120C 数据表/日文[Sep,2024]PDF: 630KB

数据表

TW045N120C 数据表/英文[Sep,2024]PDF: 518KB

Simulation Model

PSpice Model[May,2023]ZIP: 44KB

Simulation Model

LTspice Model[Apr,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Apr,2023]ZIP: 10KB

Simulation Model

PLECS Model[Nov,2024]ZIP: 6KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Dec,2023]PDF: 172KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Dec,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Dec,2024]PDF: 86KB

相关技术数据

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

相关技术数据

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

相关技术数据

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

数据表

TW045N120C 数据表/日文[Sep,2024]PDF: 630KB

数据表

TW045N120C 数据表/英文[Sep,2024]PDF: 518KB

相关技术数据

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

相关技术数据

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

相关技术数据

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Simulation Model

PSpice Model[May,2023]ZIP: 44KB

Simulation Model

LTspice Model[Apr,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Apr,2023]ZIP: 10KB

Simulation Model

PLECS Model[Nov,2024]ZIP: 6KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Dec,2023]PDF: 172KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Dec,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Dec,2024]PDF: 86KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

Application Scope	Switching regulators
Polarity	N-ch
RoHS Compatible Product(s) (#)	Available

封装

Toshiba Package Name	TO-247
Package Image
Pins	3
Mounting	Through Hole
Width×Length×Height (mm)	15.94×20.95×5.02
Package Dimensions	查看

Please refer to the link destination to check the detailed size.

绝对最大额定值

项目	符号	值	单位
Drain-Source voltage	V_DSS	1200	V
Gate-Source voltage	V_GSS	+25/-10	V
Drain current	I_D	40	A
Power Dissipation	P_D	182	W

电气特性

项目	符号	条件	值	单位
Gate threshold voltage (Max)	V_th	-	5.0	V
Gate threshold voltage (Min)	V_th	-	3.0	V
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=18V	45	mΩ
Input capacitance (Typ.)	C_iss	-	1969	pF
Total gate charge (Typ.)	Q_g	-	57	nC

文档

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数据表 TW045N120C 数据表/日文

PDF: 630KB

Sep,2024

数据表 TW045N120C 数据表/英文

PDF: 518KB

Sep,2024

Simulation Model PSpice Model ZIP

ZIP: 44KB

May,2023

Simulation Model LTspice Model (Note1) ZIP

ZIP: 50KB

Apr,2023

Simulation Model SIMetrix Model (Note2) ZIP

ZIP: 10KB

Apr,2023

NEW Simulation Model PLECS Model (Note3) ZIP

ZIP: 6KB

Nov,2024

Thermal Simulation Model Simplified CFD Model ZIP

ZIP: 10KB

Oct,2023

Reliability Information Reliability Data

PDF: 172KB

Dec,2023

UPDATED Environment Information Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances

PDF: 86KB

Dec,2024

UPDATED Environment Information Certificate on Content of SVHC of REACH

PDF: 86KB

Dec,2024

相关技术数据 Features of third generation SiC MOSFET

PDF: 1316KB

Jun,2023

相关技术数据 MOSFET SPICE model grade

PDF: 1639KB

May,2023

相关技术数据 FAQ: SiC MOSFET Application Notes

PDF: 801KB

Mar,2021

相关技术数据 Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes

PDF: 907KB

Aug,2020

相关技术数据 Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes

PDF: 792KB

Aug,2020

Catalog Selection Guide MOSFETs 2024 Rev2.0

PDF: 10837KB

Jul,2024

(Note1)	LTspice ^® is a trademark and simulation software of ADI (Analog Devices, Inc.).
(Note2)	SIMetrix^® is simulation software and registered trademarks of SIMetrix Technologies Ltd.
(Note3)	PLECS ^® is a registered trademark of Plexim, Inc.

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.
For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

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TW045N120C

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封装

绝对最大额定值

电气特性

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