TPCP8407

不推荐用于新设计

Power MOSFET (N-ch + P-ch complementary)

产品概要

Application Scope Motor Drivers / Mobile Equipments
Polarity N-ch + P-ch
Generation U-MOSⅣ / U-MOSⅥ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name PS-8
Package Image 东芝 TPCP8407 Power MOSFET (N-ch + P-ch complementary)产品 PS-8 封装图片
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 单位
Drain-Source voltage (Q1) VDSS 40 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 5.0 A
Drain-Source voltage (Q2) VDSS -40 V
Gate-Source voltage (Q2) VGSS +10/-20 V
Drain current (Q2) ID -4.0 A
Power Dissipation PD 1.77 W

电气特性

项目 符号 条件 单位
Gate threshold voltage (Q1) (Max) Vth - 3.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=6V 62.8
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 36.3
Input capacitance (Q1) (Typ.) Ciss - 505 pF
Total gate charge (Q1) (Typ.) Qg VGS=10V 11.8 nC
Gate threshold voltage (Q2) (Max) Vth - -3.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 56.8
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-6V 82.2
Input capacitance (Q2) (Typ.) Ciss - 810 pF
Total gate charge (Q2) (Typ.) Qg VGS=-10V 18 nC

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Sep,2016

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