SSM6L09FU

停产产品

Small Low ON resistance MOSFETs

产品概要

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation π-MOSⅥ / π-MOSⅥ
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name SOT-363 (US6)
Package Image 东芝 SSM6L09FU Small Low ON resistance MOSFETs产品 US6 封装图片
JEITA SC-88
Package Code SOT-363
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.9
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 单位
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 400 mA
Drain-Source voltage (Q2) VDSS -30 V
Gate-Source voltage (Q2) VGSS +/-20 V
Drain current (Q2) ID -200 mA
Power Dissipation PD 0.3 W

电气特性

项目 符号 条件 单位
Gate threshold voltage (Q1) (Max) Vth - 1.8 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=3.3V 1.7 Ω
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4V 1.2 Ω
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 700
Input capacitance (Q1) (Typ.) Ciss - 20 pF
Gate threshold voltage (Q2) (Max) Vth - -1.8 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 2.7 Ω
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4V 4.2 Ω
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-3.3V 6.0 Ω
Input capacitance (Q2) (Typ.) Ciss - 22 pF

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Oct,2016

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