TPHR8504PL1

Power MOSFET (N-ch single 30V<VDSS≤60V)

  • 相关参考设计(4)

数据表

TPHR8504PL1 数据表/日文[Jun,2020]PDF: 692KB

数据表

TPHR8504PL1 数据表/英文[Jun,2020]PDF: 594KB

Simulation Model

PSpice Model[Jan,2026]ZIP: 42KB

Simulation Model

LTspice Model[Jan,2026]ZIP: 49KB

Simulation Model

SIMetrix Model[Jan,2026]ZIP: 9KB

Thermal Simulation Model

Simplified CFD Model[Nov,2022]ZIP: 8KB

Reliability Information

Reliability Data[Apr,2025]PDF: 247KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

数据表

TPHR8504PL1 数据表/日文[Jun,2020]PDF: 692KB

数据表

TPHR8504PL1 数据表/英文[Jun,2020]PDF: 594KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jan,2026]ZIP: 42KB

Simulation Model

LTspice Model[Jan,2026]ZIP: 49KB

Simulation Model

SIMetrix Model[Jan,2026]ZIP: 9KB

Thermal Simulation Model

Simplified CFD Model[Nov,2022]ZIP: 8KB

Reliability Information

Reliability Data[Apr,2025]PDF: 247KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

产品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name SOP Advance(N)
Package Image 东芝 TPHR8504PL1 Power MOSFET (N-ch single 30V&lt;VDSS&le;60V)产品 SOP Advance(N) 封装图片
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 4.9×6.1×1.0
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

Download from UltraLibrarian® in your desired CAD format
*1 *3
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>*2 *3

Download from SamacSys
*2 *3

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 370 A
Power Dissipation PD 210 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 2.4 V
Gate threshold voltage (Min) Vth - 1.4 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 1.4 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 0.85 mΩ
Input capacitance (Typ.) Ciss - 7370 pF
Total gate charge (Typ.) Qg VGS=10V 103 nC
Output charge (Typ.) Qoss - 85.4 nC
Reverse recovery time (Typ.) trr - 58 ns
Reverse recovery charge (Typ.) Qrr - 70 nC
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Jan,2026

Jan,2026

Jan,2026

Nov,2022

Apr,2025

*1

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

*2

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

参考设计

电源多路复用器电路PCB照片示例
电源多路复用器电路
在此参考设计中，在一个小型印刷电路板（PCB）上实现了具有2个输入和1个输出的电源多路复用器电路。将从东芝的多种产品线选择的MOSFET栅极驱动电路IC、eFuse IC、齐纳二极管和小型封装MOSFET等器件进行组合，实现具有BBM和MBB开关的理想二极管。
详细信息
多路复用器电路PCB照片示例
使用共漏极MOSFET的电源多路复用器电路
此参考设计中，在一个小型印刷电路板（PCB）上实现了具有2个输入和1个输出的电源多路复用器电路。我们现已在已开发的电源多路复用器电路参考设计中增加了使用共漏极MOSFET的应用电路。该参考电路通过将东芝多种产品线中的MOSFET栅极驱动IC和齐纳二极管等器件进行理想组合，可以实现BBM和MBB模式的切换。
详细信息
这是eFuse应用电路（带热关断功能）的图片。
eFuse应用电路（带热关断功能）
该参考设计提供了构建在小型电路板上的eFuse IC应用电路（带热关断功能）的设计指南、数据和其他内容。该电路通过结合eFuse IC和ThermoflaggerTM（过温检测 IC）提供过温检测和保护。
详细信息
eFuse应用电路（具有增强过流保护功能）图片
eFuse应用电路（具有增强过流保护功能）图片
该参考设计提供了构建在小型电路板上的eFuse IC应用电路（具有增强过流保护功能）的设计指南、数据和其他内容。
该电路通过将eFuse IC和用作过流检测器件的ThermoflaggerTM结合使用来提供精确的过流关断。
详细信息

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