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什么是反向导通IGBT（RC-IGBT）？
反向导通IGBT（RC-IGBT）在单个芯片上集成了IGBT和续流二极管（FWD）。在许多IGBT应用中，有一种续流电流可从发射极流向集电极的模式。对于这种续流操作，续流二极管与IGBT反向并联连接。图（b）显示了RC-IGBT的内部结构示例。集电极中的P区的一部分被N区所取代，与发射极中的P区形成PIN二极管(*1)（P-N--P）。如图（a）所示，该PIN二极管像图（a）中所示的续流二极管（FWD）一样与IGBT反向并联连接，并用作FWD。目前，除了电压谐振，RC-IGBT还可用于硬开关领域。
(*1)PIN二极管是P区与N区之间具有高电阻本征（I）半导体区域的二极管。由于掺杂浓度低，本征区具有与本征半导体接近的高电阻。需要高耐压的IGBT中的FWD具有这种结构。。
