MOSFET（TK62N60X）应用电路的并联操作

该参考设计提供了使用600V MOSFET并联运行以提高输出功率的仿真模型／电路和结果示例。

器件和PCB印制线的寄生电感
仿真电路

特点

  • MOSFET behavior in parallel operation analyzed via circuit simulation
  • Device: TK62N60X (TO-247 package), 600V DTMOSIV-H series
  • Suitable for PFC circuits and primary-side in AC-DC power supplies
  • Provides solution to achieve higher output power

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

东芝产品

器件型号 器件目录 搭载部位・数量 说明
功率MOSFET（N沟道500V＜VDSS≤700V） N沟道MOSFET，600V，0.04Ω@10V，TO-247，DTMOSⅣ-H

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

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