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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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使用电池时的电源管理和防回流电路示例

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小信号MOSFET

器件型号 SSM3J64CTC SSM3K16CTC
封装 CST3C CST3C
RDS(ON) (Typ.) [Ω] @ | VGS=2.5V | 0.4 2.1
ID[A] -1 0.2
VDSS[V] -12 20
VGSS[V] ±10 ±10
极性 P沟道 N沟道

肖特基二极管

器件型号 CTS05S30
封装 CST2
IO[A] 0.5
VR[V] 20
VF(典型值)[V]@IF=0.1A
0.28
IR(最大值)[mA]@VR=10V
0.15

N沟道MOSFET栅极驱动IC

器件型号 VIN_OVLO
最小值/最大值[V]
VGS
典型值/最大值[V]
N沟道MOSFET型可驱动 封装
TCK401G 28以上 最大值10
(VIN≥12V)
单高边共源极 WCSP6E
TCK402G
TCK420G 26.50/28.50 10/11
(VIN≥5V)

单高边共漏极

WCSP6G
TCK421G 22.34/24.05
TCK422G
13.61/14.91
TCK423G 13.61/14.91 5.6/6.3
TCK424G 10.35/11.47
TCK425G 5.76/6.87

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