TK20N60W

Power MOSFET (N-ch 500V<VDSS≤700V)

  • 相关参考设计(2)

数据表

TK20N60W 数据表/日文[Dec,2013]PDF: 344KB

数据表

TK20N60W 数据表/英文[Dec,2013]PDF: 251KB

Simulation Model

PSpice Model[Jul,2020]lib: 3KB

Simulation Model

LTspice Model[Mar,2021]ZIP: 11KB

Simulation Model

SIMetrix Model[Apr,2025]ZIP: 4KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Mar,2026]PDF: 201KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2026]PDF: 169KB

Environment Information

Certificate on Content of SVHC of REACH[Apr,2026]PDF: 162KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

数据表

TK20N60W 数据表/日文[Dec,2013]PDF: 344KB

数据表

TK20N60W 数据表/英文[Dec,2013]PDF: 251KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jul,2020]lib: 3KB

Simulation Model

LTspice Model[Mar,2021]ZIP: 11KB

Simulation Model

SIMetrix Model[Apr,2025]ZIP: 4KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Mar,2026]PDF: 201KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2026]PDF: 169KB

Environment Information

Certificate on Content of SVHC of REACH[Apr,2026]PDF: 162KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

产品概要

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅣ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name TO-247
Package Image 东芝 TK20N60W Power MOSFET (N-ch 500V&lt;VDSS&le;700V)产品 TO-247 封装图片
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 15.94×20.95×5.02
Package Dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

Download from UltraLibrarian® in your desired CAD format
*1 *3
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>*2 *3

Download from SamacSys
*2 *3

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 600 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 20 A
Power Dissipation PD 165 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 3.7 V
Gate threshold voltage (Min) Vth - 2.7 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 155 mΩ
Input capacitance (Typ.) Ciss - 1680 pF
Total gate charge (Typ.) Qg VGS=10V 48 nC
Reverse recovery time (Typ.) trr - 330 ns
Reverse recovery charge (Typ.) Qrr - 2900 nC
购买及样品申请
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Apr,2025

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*1

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

*2

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

可订购器件型号

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS 库存查询
TK20N60W,S1VF 30 Yes

参考设计

交错式PFC电源基础仿真电路的电路图
交错式PFC电源基础仿真电路
可在OrCAD®上操作的仿真电路、设计参考文件、组成器件的概述
详细信息
全桥AC-DC电源基本仿真电路的电路
全桥AC-DC电源基本仿真电路
该参考设计提供了基于OrCAD®的仿真电路，仿真结果和设计指南。这是用于设计AC-DC电源的全桥拓扑。
详细信息

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