SSM6K804R

Small Low ON resistance MOSFETs

  • 相关参考设计(2)

产品概要

Application Scope Power Management Switches / DC-DC Converters
Feature Low drain-source on-resistance
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name TSOP6F
Package Image 东芝 SSM6K804R Small Low ON resistance MOSFETs产品 TSOP6F 封装图片
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

Download from UltraLibrarian® in your desired CAD format
*1 *3

SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>*2 *3

Download from SamacSys
*2 *3

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 12 A
Power Dissipation PD 3 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 2.4 V
Gate threshold voltage (Min) Vth - 1.4 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 18 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 12 mΩ
Input capacitance (Typ.) Ciss - 1110 pF
Total gate charge (Typ.) Qg - 7.5 nC
购买及样品申请
请联系东芝官方代理商或就近联系我们的销售网点。
您可以通过以下链接搜索及购买少量样品。

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Mar,2022

May,2022

Feb,2024

Jul,2025

Oct,2026

Oct,2026

*

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

可订购器件型号

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS Note 库存查询
SSM6K804R,LF 3000 Yes General Use

Reference Design

使用SmartMCD™的车载车身电子电机驱动电路
我们开发了一种使用SmartMCDTM(一种内置微控制器的栅极驱动IC)进行无感矢量控制车载车身电机控制电路。该参考设计对各种电路的设计要点、设计数据和使用方法进行了说明。
这是SiC MOSFET模块得栅极驱动电路图片
SiC MOSFET模块的栅极驱动电路
近年来,SiC MOSFET模块比传统的IGBT模块尺寸更小、损耗更低,因此越来越受欢迎,在工业电机驱动、铁路逆变器等功率转换应用中非常有用。这是一款具有各种保护功能的栅极驱动电路,可以安全地驱动SiC MOSFET模块。
该设计采用TLP5231预驱光耦,该器件能够通过外部缓冲MOSFET实现大电流栅极驱动,并内置多种保护功能,可实现大电流/高压SiC MOSFET模块的隔离栅极驱动。它由62mm×100mm板上的高端和低端两个通道组成,可安装在东芝双MOSFET模块上。
提供有关电路各部分的设计技巧、操作方法以及电路图和 PCB 图案等设计信息,请将其用于您的设计。
请注意:自2026年4月起,2SC6026MFV 已被列为“不推荐用于新设计(NRND)”产品。
E3D SiC MOSFET Module Gate Driver
A gate driver for SiC MOSFET modules used in industrial and railway inverter/converter applications. Compatible with Toshiba's E3D-package SiC MOSFET modules, including the MG250YD2YMS3. Design resources such as schematics, BOMs, PCB layouts, together with guidance on design considerations, operation, and circuit tuning, help accelerate the development of SiC module gate drivers.
iXPLV® SiC MOSFET Module Gate Driver
A gate driver for SiC MOSFET modules used in industrial and railway inverter/converter applications. Compatible with Toshiba's iXPLV-package SiC MOSFET modules, including the MG800FXF2YMS3. Design resources such as schematics, BOMs, PCB layouts, together with guidance on design considerations, operation, and circuit tuning, help accelerate the development of SiC module gate drivers.

Applications

汽车LED前照灯
降低功耗和电路板的小型化等对于设计LED头灯来说非常重要。东芝提供适用于LED矩阵控制单元、电源单元等的各种半导体产品的信息以及电路配置示例。
车载USB电源充电器
在设计USB电源充电器时,降低电源和信号噪声以及降低功耗等非常重要。东芝提供适用于点烟器插座电路或附件电路等的各种半导体产品的信息以及电路配置示例。.

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