TW015Z120C

Power SiC MOSFETs

数据表

TW015Z120C 数据表/日文[Jun,2023]PDF: 751KB

数据表

TW015Z120C 数据表/英文[Jun,2023]PDF: 646KB

Simulation Model

PSpice Model[Sep,2023]ZIP: 45KB

Simulation Model

LTspice Model[Oct,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Oct,2023]ZIP: 11KB

Simulation Model

PLECS Model[Nov,2024]ZIP: 4KB

Thermal Simulation Model

Simplified CFD Model[Feb,2024]ZIP: 10KB

Reliability Information

Reliability Data[Apr,2024]PDF: 141KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Jan,2025]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Jan,2025]PDF: 86KB

相关技术数据

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

相关技术数据

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

相关技术数据

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

数据表

TW015Z120C 数据表/日文[Jun,2023]PDF: 751KB

数据表

TW015Z120C 数据表/英文[Jun,2023]PDF: 646KB

相关技术数据

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

相关技术数据

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

相关技术数据

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Simulation Model

PSpice Model[Sep,2023]ZIP: 45KB

Simulation Model

LTspice Model[Oct,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Oct,2023]ZIP: 11KB

Simulation Model

PLECS Model[Nov,2024]ZIP: 4KB

Thermal Simulation Model

Simplified CFD Model[Feb,2024]ZIP: 10KB

Reliability Information

Reliability Data[Apr,2024]PDF: 141KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Jan,2025]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Jan,2025]PDF: 86KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

产品概要

Application Scope Switching regulators
Polarity N-ch
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name TO-247-4L(X)
Package Image TO-247-4L(X)
Pins 4
Mounting Through Hole
Width×Length×Height
(mm)		 15.94×23.45×5.02
Package Dimensions 查看
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>(Note1)(Note2)

Download from SamacSys
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 1200 V
Gate-Source voltage VGSS +25/-10 V
Drain current ID 100 A
Power Dissipation PD 431 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 5.0 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=18V 15 mΩ
Input capacitance (Typ.) Ciss - 6000 pF
Total gate charge (Typ.) Qg - 158 nC
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Sep,2023

Oct,2023

Oct,2023

Nov,2024

Feb,2024

Apr,2024

Jan,2025

Jan,2025

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

(Note3)

PLECS ® is a registered trademark of Plexim, Inc.

应用

不间断电源
在设计不间断电源（UPS）时，低功耗和小型化等非常重要。东芝提供适用于电源单元、逆变器／转换器单元、控制单元、信号传输单元等的各种半导体产品的信息以及电路配置示例。
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