TPCP8207

不推荐用于新设计

Power MOSFET (N-ch dual)

数据表

TPCP8207 数据表/日文[Feb,2016]PDF: 393KB

数据表

TPCP8207 数据表/英文[Feb,2016]PDF: 266KB

Simulation Model

PSpice Model[Dec,2015]lib: 3KB

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Catalog

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数据表

TPCP8207 数据表/日文[Feb,2016]PDF: 393KB

数据表

TPCP8207 数据表/英文[Feb,2016]PDF: 266KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

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The maximum ratings:Bipolar Transistor Application Notes[Mar,2021]PDF: 615KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Dec,2015]lib: 3KB

Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

Catalog

Introduction of Toshiba MOSFET Gate Driver ICs[Jun,2025]PDF: 455KB

产品概要

Application Scope Motor Drivers / Mobile Equipments
Polarity N-ch×2
Generation U-MOSⅣ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name PS-8
Package Image 东芝 TPCP8207 Power MOSFET (N-ch dual)产品 PS-8 封装图片
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 2.9×2.8×0.8
Package Dimensions 查看
Land pattern dimensions 查看

 Please refer to the link destination to check the detailed size.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage (Q1/Q2) VDSS 40 V
Gate-Source voltage (Q1/Q2) VGSS +/-20 V
Drain current (Q1/Q2) ID 5.0 A
Power Dissipation PD 1.77 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Q1/Q2) (Max) Vth - 3.0 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=6V 62.8 mΩ
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=10V 36.3 mΩ
Input capacitance (Q1/Q2) (Typ.) Ciss - 505 pF
Total gate charge (Q1/Q2) (Typ.) Qg VGS=10V 11.8 nC

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Dec,2015

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