SSM6P35FU

不推荐用于新设计

Small-signal MOSFET 2 in 1

产品概要

Application Scope High-Speed Switching / Analog Switches
Polarity P-ch×2
Generation π-MOSⅥ
Internal Connection Independent
Component Product (Q1) SSM3J35MFV
Component Product (Q2) SSM3J35MFV
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name SOT-363 (US6)
Package Image 东芝 SSM6P35FU Small-signal MOSFET 2 in 1产品 US6 封装图片
JEITA SC-88
Package Code SOT-363
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.9
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 单位
Drain-Source voltage (Q1/Q2) VDSS -20 V
Gate-Source voltage (Q1/Q2) VGSS +/-10 V
Drain current (Q1/Q2) ID -100 mA
Power Dissipation PD 0.2 W

电气特性

项目 符号 条件 单位
Gate threshold voltage (Q1/Q2) (Max) Vth - -1.0 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4V 8.0 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=2.5V 11 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.5V 22 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.2V 44 Ω
Input capacitance (Q1/Q2) (Typ.) Ciss - 12.2 pF

文档

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Oct,2015

Feb,2019

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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