TK16A60W5

Power MOSFET (N-ch 500V<VDSS≤700V)

数据表

TK16A60W5 数据表/日文[Dec,2013]PDF: 367KB

数据表

TK16A60W5 数据表/英文[Dec,2013]PDF: 244KB

Simulation Model

PSpice Model[Jul,2020]lib: 3KB

Simulation Model

LTspice Model[Mar,2021]ZIP: 11KB

Thermal Simulation Model

Simplified CFD Model[Aug,2024]ZIP: 11KB

Reliability Information

Reliability Data[Oct,2024]PDF: 203KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

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Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

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Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

数据表

TK16A60W5 数据表/日文[Dec,2013]PDF: 367KB

数据表

TK16A60W5 数据表/英文[Dec,2013]PDF: 244KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jul,2020]lib: 3KB

Simulation Model

LTspice Model[Mar,2021]ZIP: 11KB

Thermal Simulation Model

Simplified CFD Model[Aug,2024]ZIP: 11KB

Reliability Information

Reliability Data[Oct,2024]PDF: 203KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

产品概要

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅣ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name TO-220SIS
Package Image TO-220SIS
JEITA SC-67
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 10.0×15.0×4.5
Package Dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note3)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note3)
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>(Note2)(Note3)

Download from SamacSys
(Note2)(Note3)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note3)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 600 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 15.8 A
Power Dissipation PD 40 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 4.5 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 230 mΩ
Input capacitance (Typ.) Ciss - 1350 pF
Total gate charge (Typ.) Qg VGS=10V 43 nC
Reverse recovery time (Typ.) trr - 100 ns
Reverse recovery charge (Typ.) Qrr - 400 nC
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Jul,2020

Mar,2021

Aug,2024

Oct,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

可订购器件型号

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS
TK16A60W5,S4VX 50 Yes

应用

变频器／伺服
在设计变频器／伺服时，低功耗、小型化和稳定运行等非常重要。东芝提供适用于电源单元、电机驱动电路单元、信号传输单元等的各种半导体产品的信息以及电路配置示例。
详细信息
不间断电源
在设计不间断电源（UPS）时，低功耗和小型化等非常重要。东芝提供适用于电源单元、逆变器／转换器单元、控制单元、信号传输单元等的各种半导体产品的信息以及电路配置示例。
详细信息

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