TK10A80E

Power MOSFET (N-ch 700V<VDSS)

数据表

TK10A80E 数据表/日文[Mar,2014]PDF: 342KB

数据表

TK10A80E 数据表/英文[Mar,2014]PDF: 220KB

Simulation Model

PSpice Model[Feb,2014]lib: 3KB

Simulation Model

LTspice Model[Feb,2019]mod: 21KB

Reliability Information

Reliability Data[Oct,2024]PDF: 203KB

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Catalog

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数据表

TK10A80E 数据表/日文[Mar,2014]PDF: 342KB

数据表

TK10A80E 数据表/英文[Mar,2014]PDF: 220KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Feb,2014]lib: 3KB

Simulation Model

LTspice Model[Feb,2019]mod: 21KB

Reliability Information

Reliability Data[Oct,2024]PDF: 203KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

产品概要

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation π-MOSⅧ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name TO-220SIS
Package Image TO-220SIS
JEITA SC-67
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 10.0×15.0×4.5
Package Dimensions 查看
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(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note3)

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(Note1)(Note3)
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>(Note2)(Note3)

Download from SamacSys
(Note2)(Note3)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note3)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 800 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 10 A
Power Dissipation PD 50 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 4.0 V
Gate threshold voltage (Min) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 1.0 Ω
Input capacitance (Typ.) Ciss - 2000 pF
Total gate charge (Typ.) Qg VGS=10V 46 nC
Reverse recovery time (Typ.) trr - 1200 ns
Reverse recovery charge (Typ.) Qrr - 12000 nC
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Feb,2014

Feb,2019

Oct,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

可订购器件型号

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS
TK10A80E,S4X 50 Yes

应用

空调
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