TPN1R603PL

Power MOSFET (N-ch single VDSS≤30V)

  • 相关参考设计(2)

产品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
Package Dimensions 查看
Land pattern dimensions 查看
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

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绝对最大额定值

项目 符号 单位
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 188 A
Power Dissipation PD 104 W

电气特性

项目 符号 条件 单位
Gate threshold voltage (Max) Vth - 2.1 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 2.5
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 1.6
Input capacitance (Typ.) Ciss - 2970 pF
Total gate charge (Typ.) Qg VGS=10V 41 nC
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Jun,2021

Jul,2021

Nov,2022

Dec,2023

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

可订购器件型号

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TPN1R603PL,L1Q 5000 Yes

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常见问题

常见问题(FAQ)

Notes

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