TPH9R00CQH

Power MOSFET (N-ch single 60V<VDSS≤150V)

相关参考设计(2)

全部 Data sheet 应用说明 Other

数据表

TPH9R00CQH 数据表/日文[Mar,2021]PDF: 758KB

数据表

TPH9R00CQH 数据表/英文[Mar,2021]PDF: 650KB

Simulation Model

PSpice Model[Jan,2023]ZIP: 41KB

Simulation Model

LTspice Model[Feb,2023]ZIP: 49KB

Simulation Model

SIMetrix Model[May,2024]ZIP: 9KB

Thermal Simulation Model

Simplified CFD Model[Sep,2022]ZIP: 16KB

Reliability Information

Reliability Data[Sep,2024]PDF: 142KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

PowerMOSFET U-MOSⅩ-H 150V[Apr,2023]PDF: 2305KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

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Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

数据表

TPH9R00CQH 数据表/日文[Mar,2021]PDF: 758KB

数据表

TPH9R00CQH 数据表/英文[Mar,2021]PDF: 650KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

PowerMOSFET U-MOSⅩ-H 150V[Apr,2023]PDF: 2305KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jan,2023]ZIP: 41KB

Simulation Model

LTspice Model[Feb,2023]ZIP: 49KB

Simulation Model

SIMetrix Model[May,2024]ZIP: 9KB

Thermal Simulation Model

Simplified CFD Model[Sep,2022]ZIP: 16KB

Reliability Information

Reliability Data[Sep,2024]PDF: 142KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

Application Scope	High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity	N-ch
Generation	U-MOSⅩ-H
Internal Connection	Single
RoHS Compatible Product(s) (#)	Available

Toshiba Package Name	SOP Advance / SOP Advance(N)
Package Image
Pins	8
Mounting	Surface Mount
SamacSys CAD model (Symbol, Footprint and 3D model)	Download from SamacSys (Note1)(Note2)

项目	符号	值	单位
Drain-Source voltage	V_DSS	150	V
Gate-Source voltage	V_GSS	20	V
Drain current	I_D	64	A
Power Dissipation	P_D	210	W

项目	符号	条件	值	单位
Gate threshold voltage (Max)	V_th	-	4.3	V
Gate threshold voltage (Min)	V_th	-	3.3	V
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=8V	11	mΩ
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	9	mΩ
Input capacitance (Typ.)	C_iss	-	3500	pF
Total gate charge (Typ.)	Q_g	V_GS=10V	44	nC
Output charge (Typ.)	Q_oss	-	87	nC
Reverse recovery time (Typ.)	t_rr	-	72	ns
Reverse recovery charge (Typ.)	Q_rr	-	133	nC

Orderable part number (example)	MOQ(pcs)	Reliability Information	RoHS
TPH9R00CQH,LQ	5000		Yes

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.
For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

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Notes

(Note1)	SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.
(Note2)	Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

(Note1)	LTspice ^® is a trademark and simulation software of ADI (Analog Devices, Inc.).
(Note2)	SIMetrix^® is simulation software and registered trademarks of SIMetrix Technologies Ltd.