TPH9R00CQ5

Power MOSFET (N-ch single 60V<VDSS≤150V)

  • 相关参考设计(2)

数据表

TPH9R00CQ5 数据表/日文[May,2024]PDF: 742KB

数据表

TPH9R00CQ5 数据表/英文[May,2024]PDF: 637KB

Simulation Model

PSpice Model[Nov,2022]ZIP: 42KB

Simulation Model

LTspice Model[Nov,2022]ZIP: 50KB

Simulation Model

SIMetrix Model[May,2024]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 17KB

Reliability Information

Reliability Data[Aug,2024]PDF: 142KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

PowerMOSFET U-MOSⅩ-H 150V[Apr,2023]PDF: 2305KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

数据表

TPH9R00CQ5 数据表/日文[May,2024]PDF: 742KB

数据表

TPH9R00CQ5 数据表/英文[May,2024]PDF: 637KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

PowerMOSFET U-MOSⅩ-H 150V[Apr,2023]PDF: 2305KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Nov,2022]ZIP: 42KB

Simulation Model

LTspice Model[Nov,2022]ZIP: 50KB

Simulation Model

SIMetrix Model[May,2024]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 17KB

Reliability Information

Reliability Data[Aug,2024]PDF: 142KB

Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

产品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅩ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name SOP Advance / SOP Advance(N)
Package Image 东芝 TPH9R00CQ5 Power MOSFET (N-ch single 60V&lt;VDSS&le;150V)产品 SOP Advance / SOP Advance(N) 封装图片
Pins 8
Mounting Surface Mount
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note3)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note3)
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>(Note2)(Note3)

Download from SamacSys
(Note2)(Note3)

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note3)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 150 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 64 A
Power Dissipation PD 210 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 4.5 V
Gate threshold voltage (Min) Vth - 3.1 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=8V 11 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 9 mΩ
Input capacitance (Typ.) Ciss - 3500 pF
Total gate charge (Typ.) Qg VGS=10V 44 nC
Output charge (Typ.) Qoss - 87 nC
Reverse recovery time (Typ.) trr - 40 ns
Reverse recovery charge (Typ.) Qrr - 34 nC
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Nov,2022

Nov,2022

May,2024

Oct,2023

Aug,2024

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

参考设计

PCB图片（示例）
采用MOSFET的3相多电平逆变器
该参考设计提供了具有5电平输出的3相多电平逆变器的设计指南、数据和其他内容。其采用150V MOSFET驱动AC 200V电机。
详细信息
PCB Photo (example)
用于通信设备的1kW非隔离Buck-Boost DC-DC转换器
该参考设计提供了用于通信设备的1kW非隔离Buck-Boost DC-DC转换器的设计指南、数据和其他内容。
详细信息

应用

变频器／伺服
在设计变频器／伺服时，低功耗、小型化和稳定运行等非常重要。东芝提供适用于电源单元、电机驱动电路单元、信号传输单元等的各种半导体产品的信息以及电路配置示例。
详细信息
服务器
在设计服务器时，低功耗和小型化等非常重要。东芝提供了适用于电源单元、电机驱动单元、过温监控单元等的各种半导体产品的信息以及电路配置示例。
详细信息
不间断电源
在设计不间断电源（UPS）时，低功耗和小型化等非常重要。东芝提供适用于电源单元、逆变器／转换器单元、控制单元、信号传输单元等的各种半导体产品的信息以及电路配置示例。
详细信息

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