TPH9R00CQ5

Power MOSFET (N-ch single 60V<VDSS≤150V)

  • 相关参考设计(2)

数据表

TPH9R00CQ5 数据表/日文[May,2024]PDF: 731KB

数据表

TPH9R00CQ5 数据表/英文[May,2024]PDF: 655KB

Simulation Model

PSpice Model[Nov,2022]ZIP: 42KB

Simulation Model

LTspice Model[Nov,2022]ZIP: 50KB

Simulation Model

SIMetrix Model[May,2024]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 17KB

Reliability Information

Reliability Data[Aug,2024]PDF: 142KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

PowerMOSFET U-MOSⅩ-H 150V[Apr,2023]PDF: 2305KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

数据表

TPH9R00CQ5 数据表/日文[May,2024]PDF: 731KB

数据表

TPH9R00CQ5 数据表/英文[May,2024]PDF: 655KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

PowerMOSFET U-MOSⅩ-H 150V[Apr,2023]PDF: 2305KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Nov,2022]ZIP: 42KB

Simulation Model

LTspice Model[Nov,2022]ZIP: 50KB

Simulation Model

SIMetrix Model[May,2024]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 17KB

Reliability Information

Reliability Data[Aug,2024]PDF: 142KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

产品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅩ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name SOP Advance / SOP Advance(N)
Package Image 东芝 TPH9R00CQ5 Power MOSFET (N-ch single 60V&lt;VDSS&le;150V)产品 SOP Advance / SOP Advance(N) 封装图片
Pins 8
Mounting Surface Mount
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

Download from UltraLibrarian® in your desired CAD format
*1 *3
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>*2 *3

Download from SamacSys
*2 *3

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 150 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 64 A
Power Dissipation PD 210 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 4.5 V
Gate threshold voltage (Min) Vth - 3.1 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=8V 11 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 9 mΩ
Input capacitance (Typ.) Ciss - 3500 pF
Total gate charge (Typ.) Qg VGS=10V 44 nC
Output charge (Typ.) Qoss - 87 nC
Reverse recovery time (Typ.) trr - 40 ns
Reverse recovery charge (Typ.) Qrr - 34 nC
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Nov,2022

Nov,2022

May,2024

Oct,2023

Aug,2024

*1

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

*2

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

参考设计

PCB图片（示例）
采用MOSFET的3相多电平逆变器
该参考设计提供了具有5电平输出的3相多电平逆变器的设计指南、数据和其他内容。其采用150V MOSFET驱动AC 200V电机。
详细信息
PCB Photo (example)
用于通信设备的1kW非隔离Buck-Boost DC-DC转换器
该参考设计提供了用于通信设备的1kW非隔离Buck-Boost DC-DC转换器的设计指南、数据和其他内容。
详细信息

应用

变频器／伺服
在设计变频器／伺服时，低功耗、小型化和稳定运行等非常重要。东芝提供适用于电源单元、电机驱动电路单元、信号传输单元等的各种半导体产品的信息以及电路配置示例。
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