TPH8R808QM

Power MOSFET (N-ch single 60V<VDSS≤150V)

全部 Data sheet 应用说明 Other

数据表

TPH8R808QM 数据表/日文[Jul,2022]PDF: 949KB

数据表

TPH8R808QM 数据表/英文[Sep,2022]PDF: 876KB

Simulation Model

PSpice Model[Jan,2024]ZIP: 11KB

Simulation Model

LTspice Model[Feb,2024]ZIP: 21KB

Simulation Model

SIMetrix Model[Feb,2024]ZIP: 4KB

Thermal Simulation Model

Simplified CFD Model[Feb,2024]ZIP: 8KB

Reliability Information

Reliability Data[Oct,2024]PDF: 276KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

数据表

TPH8R808QM 数据表/日文[Jul,2022]PDF: 949KB

数据表

TPH8R808QM 数据表/英文[Sep,2022]PDF: 876KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

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Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

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Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jan,2024]ZIP: 11KB

Simulation Model

LTspice Model[Feb,2024]ZIP: 21KB

Simulation Model

SIMetrix Model[Feb,2024]ZIP: 4KB

Thermal Simulation Model

Simplified CFD Model[Feb,2024]ZIP: 8KB

Reliability Information

Reliability Data[Oct,2024]PDF: 276KB

Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

产品概要

Application Scope	DC-DC Converters / High-Speed Switching / Switching Voltage Regulators
Polarity	N-ch
Generation	U-MOSⅩ-H
Internal Connection	Single
RoHS Compatible Product(s) (#)	Available

封装

Toshiba Package Name	SOP Advance(N)
Package Image
Pins	8
Mounting	Surface Mount
Width×Length×Height (mm)	4.9×6.1×1.0
Package Dimensions	查看
Land pattern dimensions	查看
Ultra Librarian^® CAD model (Symbol, Footprint and 3D model)	Download from UltraLibrarian^® in your desired CAD format (Note1)(Note3)
SamacSys CAD model (Symbol, Footprint and 3D model)	Download from SamacSys (Note2)(Note3)

Please refer to the link destination to check the detailed size.

(Note1)	Ultra Librarian^® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian^®. The footprints are generated based on the specifications of Ultra Librarian^®.
(Note2)	SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.
(Note3)	Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目	符号	值	单位
Drain-Source voltage	V_DSS	80	V
Gate-Source voltage	V_GSS	+/-20	V
Drain current	I_D	52	A
Power Dissipation	P_D	109	W

电气特性

项目	符号	条件	值	单位
Gate threshold voltage (Max)	V_th	-	3.5	V
Gate threshold voltage (Min)	V_th	-	2.5	V
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=6V	12.5	mΩ
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	8.8	mΩ
Input capacitance (Typ.)	C_iss	-	1750	pF
Total gate charge (Typ.)	Q_g	V_GS=10V	26	nC
Output charge (Typ.)	Q_oss	-	31	nC
Reverse recovery time (Typ.)	t_rr	-	37	ns
Reverse recovery charge (Typ.)	Q_rr	-	37	nC

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.
For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

(Note1)	LTspice ^® is a trademark and simulation software of ADI (Analog Devices, Inc.).
(Note2)	SIMetrix^® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

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TPH8R808QM

产品概要

封装

绝对最大额定值

电气特性

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