TPH2R003PL

Power MOSFET (N-ch single VDSS≤30V)

  • 相关参考设计(4)

数据表

TPH2R003PL 数据表/日文[Sep,2016]PDF: 565KB

数据表

TPH2R003PL 数据表/英文[Sep,2016]PDF: 457KB

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Simulation Model

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Simulation Model

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Thermal Simulation Model

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Reliability Information

Reliability Data[Oct,2024]PDF: 276KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

TPH2R003PL

产品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name SOP Advance
Package Image SOP Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 5.0×6.0×0.95
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note3)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note3)
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>(Note2)(Note3)

Download from SamacSys
(Note2)(Note3)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note3)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 180 A
Power Dissipation PD 116 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 2.1 V
Gate threshold voltage (Min) Vth - 1.1 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 2.6 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2 mΩ
Input capacitance (Typ.) Ciss - 4930 pF
Total gate charge (Typ.) Qg VGS=10V 86 nC
Output charge (Typ.) Qoss - 41 nC
Reverse recovery time (Typ.) trr - 44 ns
Reverse recovery charge (Typ.) Qrr - 43 nC
购买及样品申请
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Jun,2021

Jul,2021

Nov,2022

Oct,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

可订购器件型号

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS
TPH2R003PL,LQ 3000 Yes

参考设计

有源钳位正激AC-DC电源基础仿真电路的电路图
有源钳位正激AC-DC电源基础仿真电路
该参考设计提供基于OrCAD®的参考设计、仿真结果和设计指南，用于设计AC-DC电源的有源钳位正激拓扑结构。
详细信息
有源钳位正激DC-DC电源基础仿真电路的电路
有源钳位正激DC-DC电源基础仿真电路
该参考设计提供了基于OrCAD®的仿真电路、仿真结果和设计指南，用于设计DC-DC电源的有源钳位正激拓扑。
详细信息
半桥（HB）DC-DC电源基础仿真电路的电路
半桥（HB）DC-DC电源基础仿真电路
该参考设计提供基于OrCAD®的仿真电路、仿真结果和设计指南。用于设计DC-DC电源的半桥（HB）拓扑。
详细信息
非隔离降压DC-DC转换器的外观图片
非隔离降压DC-DC转换器
此参考设计提供了多个非隔离降压DC-DC转换器电源的设计指南、数据和其他内容。多种电源针对各种输出、负载和电路板安装区域进行了优化。
详细信息

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