更高共模瞬态抑制(CMTI)

为了保证IPM切换时光耦的输入和输出之间即使采用较大的dV/dt也能稳定工作,光电IC芯片具有屏蔽层。
最高等级将保证±30kV/μs(最小值)共模瞬态抑制,适用于IPM控制信号接口。

TLP2745端子布置图
TLP2745端子布置图
共模瞬态抑制测量电路
共模瞬态抑制测量电路
共模瞬态电阻测量示例(@dV/dt=60kV/μs)
共模瞬态电阻测量示例(@dV/dt=60kV/μs)

TLP2745在光电IC芯片上有法拉第屏蔽,共模瞬态电阻高达±30kV/μs(最小值)。

IPM接口用高CMTI光耦

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