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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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更高共模瞬态抗扰度(CMTI)

为了保证IPM切换时光耦的输入和输出之间即使采用较大的dV/dt也能稳定工作,光电IC芯片具有屏蔽层。
最高等级将保证±30kV/μs(最小值)共模瞬态抗扰度,适用于IPM控制信号接口。

TLP2745端子布置图
TLP2745端子布置图
共模瞬态抗扰度测量电路
共模瞬态抗扰度测量电路
共模瞬态电阻测量示例(@dV/dt=60kV/μs)
共模瞬态电阻测量示例(@dV/dt=60kV/μs)

TLP2745在光电IC芯片上有法拉第屏蔽,共模瞬态电阻高达±30kV/μs(最小值)。

IPM接口用高CMTI光耦

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