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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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最大额定值(Ta = 25°C)
特性 | 符号 | 额定值 | 单位 |
---|---|---|---|
集电极-基极电压 | VCBO | 60 | V |
集电极-发射极电压 | VCEO | 50 | V |
发射极-基极电压 | VEBO | 5 | V |
集电极电流 | IC | 150 | mA |
基极电流 | IB | 30 | mA |
集电极功率耗散 | PC | 150 | mW |
结温 | Tj | 125 | ℃ |
存储温度 | Tstg | -55~125 | ℃ |
表中术语的定义
VCBO:
当发射极开路时可在集电极和基极端子之间施加的绝对最大电压 。
VCEO:
当基极开路时可在集电极和发射极端子之间施加的绝对最大电压。
VEBO:
当集电极开路时可在发射极和基极端子之间施加的绝对最大电压。
集电极电流IC:
最大直流(连续)集电极电流
基极电流IB:
最大直流(连续)基极电流
集电极功耗IC:
最大允许集电极功耗
结温Tj:
晶体管能承受的最大结温
存储温度Tstg:
器件在不施加电压的条件下可进行存储的温度范围。
以下文件还包含相关信息: