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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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3-1(1)ESD保护二极管反向击穿电压(VBR)是否充分高于被保护信号线的振幅(最大电压)
ESD保护二极管两端电压接近反向击穿电压(VBR)时,漏电流增加。电压接近VBR时,漏电流可能使保护信号线的波形失真。反向电流(IR)随反向电压(VR)成指数增长。选择VRWM高于被保护信号线振幅的ESD保护二极管非常重要。