Contact us

在新窗口打开 在新窗口打开

SiC肖特基二极管

SiC Schottky Barrier Diodes

SiC Schottky barrier diodes (SBDs) feature high reverse voltage ratings. In addition to SBDs with short reverse recovery time (trr), Toshiba provides 650-V SBDs with a junction barrier Schottky (JBS) structure that provide low leakage current (Ir) and high surge current capability required for switched-mode power supplies. These devices help improve the efficiency of switched-mode power supplies.

Lineups

Voltage

Packaging

Highlight

  • High surge forward current (IFSM): Approximately 7 to 9 times of current rating IF(DC)
  • Figure of Merit  (VF・Qc[Note 1]): Approximately 30% reduction compared to the 1st generation devices, realizing higher efficiency
  • Various package lineup including isolated type and surface mount type:suit various design requirements
Electrical characteristics and symbols
(Improvement direction)
Effect on circuits Si material SiC material
FRD* SBD SBD

SBD

(Improved JBS structure)

Reverse voltage, VR

(high)

Voltage surge during switching

★★★★

★★★★★

★★★★★

Leakage current, IR

(low)

Thermal runaway

★★

★★★

★★★★★

Forward Voltage, VF

(low)

Considerable effect on efficiency

★★★

★★★★★

★★★

★★★

Reverse recovery time, trr

(low)

Considerable effect on efficiency

★★★★★

★★★★★

★★★★★

Surge current, IFSM

(large)

Inrush current when switching on

★★★★★

★★

★★★

The greater the number of ★, the better.

* FRD: Fast recovery diode

Improved JBS structure to reduce the leakage current and increase the surge current capability

Improved JBS structure to reduce the leakage current and increase the surge current capability

SiC SBD with lower switching loss

SiC SBD with lower switching loss

High withstand voltage characteristics of SiC SBDs

High withstand voltage characteristics of SiC SBDs

Purpose

SiC SBDs are suitable for power factor correction (PFC) circuits in high-efficiency power supplies, chopper circuits, and freewheel diodes integrated in switching devices.

  • Consumer electronics and office equipment: 4K LCD TVs, projectors, multifunction copiers, etc.
  • Industrial equipment: Communication base stations, PC servers, etc.
  • AC-DC Power Supplies
  • DC-DC Power Supplies

*1  VF・QC  : The product of forward voltage and total charge (VF*QC) indicates the loss performance of SiC Schottky barrier diodes. When devices with the same current rating are compared, a device with a lower VF*QC provides a lower loss.

Documents

Application Notes

Number Name Date
- 04/2019

Support

联系方式

如您需查询,请点击其中任何一个链接

技术方面的问题
购买、样片和IC可靠性的相关咨询
To Top
·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.