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适用于电源电路的碳化硅器件
SiC肖特基二极管（SBD）实现了Si材料难以实现的高击穿电压，显著降低了Si-FRD（快速恢复二极管）等p-n结二极管无法实现的反向恢复时间（电荷）。
通过采用改进的JBS结构，我们的产品改善了SBD的泄漏电流和浪涌电流（这些都是SBD的不利条件）。
如下表所示，SiC实现了用Si二极管难以实现的电源电路所需的各种特性。
| 电气特性和符号 （改进方向） |
对电路的影响 | Si材料 | SiC材料 | ||
|---|---|---|---|---|---|
| FRD* | SBD | SBD | SBD |
||
| 反向电压，VR （高） |
开关过程中的电压浪涌 | ★★★★ | ★ | ★★★★★ | ★★★★★ |
| 泄漏电流，IR （低） |
热击穿 | ★★ | ★ | ★★★ | ★★★★★ |
| 正向电压，VF （低） |
对效率有相当大的影响 | ★★★ | ★★★★★ | ★★★ | ★★★ |
| 反向恢复时间，trr （低） |
对效率有相当大的影响 | ★ | ★★★★★ | ★★★★★ | ★★★★★ |
| 浪涌电流，IFSM （大） |
合闸涌流 | ★★★★★ |
★★ | ★ | ★★★ |
★数越多越好。
* FRD：快速恢复二极管
SiC肖特基二极管
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