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低开关损耗SiC肖特基二极管（SBD）
SBD是由半导体与金属的接合形成的单极器件。原则上，SBD没有反向恢复时间，不像使用pn结二极管会引起问题。因此，SBD有助于大幅度降低关断时的开关损耗。
因为传导是由空穴和电子引起的，所以pn结二极管是双极的。pn结二极管具有反向恢复时间，因为在关断期间少数载流子（p层中的电子和n层中的空穴）会保留在结处。相反，单极的SBD没有反向恢复时间。但由于金属和半导体接合处的耗尽区具有电容，因此其充电和放电将产生电流流动。虽然该电容是温度和反向偏压的函数，但在典型的SiC SBD应用所工作的高压区几乎不受影响。
此外，该电容不是电流的函数。与pn结二极管的电容不同，当电流小于额定直流电流时，它几乎不依赖于电流。但是具有MPS结构的SiC SBD在电流超过额定直流值时可能会受到少数载流子的影响。
SBD的电容计算如下：
C（VR）=S x [ ε×q×Nd/{2×（Vbi＋VR）}]^0.5
Vbi：内置电压（＝金属的功函数—n型（p型）半导体的功函数）
S：结区，ε：介电常数，q：单位电荷，Nd：掺杂浓度
VR：反向偏置电压
虽然Vbi是温度的函数，因为Vbi << VR，所以可忽略。
SiC肖特基二极管
仿真器
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