TPN5900CNH

Power MOSFET (N-ch single 60V<VDSS≤150V)

  • 相关参考设计(1)

产品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
Package Dimensions 查看
Land pattern dimensions 查看
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

 Please refer to the link destination to check the detailed size.

 (Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

绝对最大额定值

项目 符号 单位
Drain-Source voltage VDSS 150 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 18 A
Power Dissipation PD 39 W

电气特性

项目 符号 条件 单位
Gate threshold voltage (Max) Vth - 4.0 V
Gate threshold voltage (Min) Vth - 2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 59
Input capacitance (Typ.) Ciss - 460 pF
Total gate charge (Typ.) Qg VGS=10V 7.0 nC
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Jul,2022

Jul,2022

Feb,2023

Oct,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

可订购器件型号

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TPN5900CNH,L1Q 5000 Yes

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常见问题

常见问题(FAQ)

Notes

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