TPN13008NH

Power MOSFET (N-ch single 60V<VDSS≤150V)

相关参考设计(1)

全部 Data sheet 应用说明 Other

数据表

TPN13008NH 数据表/日文[Oct,2019]PDF: 380KB

数据表

TPN13008NH 数据表/英文[Oct,2019]PDF: 264KB

Simulation Model

PSpice Model[Sep,2023]ZIP: 42KB

Simulation Model

LTspice Model[Oct,2023]ZIP: 49KB

Simulation Model

SIMetrix Model[Oct,2023]ZIP: 9KB

Thermal Simulation Model

Simplified CFD Model[Jan,2023]ZIP: 8KB

Reliability Information

Reliability Data[Oct,2024]PDF: 276KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

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Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

数据表

TPN13008NH 数据表/日文[Oct,2019]PDF: 380KB

数据表

TPN13008NH 数据表/英文[Oct,2019]PDF: 264KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Sep,2023]ZIP: 42KB

Simulation Model

LTspice Model[Oct,2023]ZIP: 49KB

Simulation Model

SIMetrix Model[Oct,2023]ZIP: 9KB

Thermal Simulation Model

Simplified CFD Model[Jan,2023]ZIP: 8KB

Reliability Information

Reliability Data[Oct,2024]PDF: 276KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

Application Scope	DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity	N-ch
Generation	U-MOSⅧ-H
Internal Connection	Single
RoHS Compatible Product(s) (#)	Available

器件型号	兼容性	备注
TPN12008QM	Package and characteristics are almost same	Almost same ON resistance
TPN19008QM	Package and characteristics are almost same	Slightly higher ON resistance

Toshiba Package Name	TSON Advance
Package Image
Pins	8
Mounting	Surface Mount
Width×Length×Height (mm)	3.3×3.3×0.85
Package Dimensions	查看
Land pattern dimensions	查看
CAD data (Symbol, Footprint and 3D model)	Download from UltraLibrarian^® in your desired CAD format (Note)

项目	符号	值	单位
Drain-Source voltage	V_DSS	80	V
Gate-Source voltage	V_GSS	+/-20	V
Drain current	I_D	40	A
Power Dissipation	P_D	42	W

项目	符号	条件	值	单位
Gate threshold voltage (Max)	V_th	-	4.0	V
Gate threshold voltage (Min)	V_th	-	2.0	V
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	13.3	mΩ
Input capacitance (Typ.)	C_iss	-	1230	pF
Total gate charge (Typ.)	Q_g	V_GS=10V	18	nC

Orderable part number (example)	MOQ(pcs)	Reliability Information	RoHS
TPN13008NH,L1Q	5000		Yes

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.
For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

(Note1)	LTspice ^® is a trademark and simulation software of ADI (Analog Devices, Inc.).
(Note2)	SIMetrix^® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

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