TK2R4E08QM

Power MOSFET (N-ch single 60V<VDSS≤150V)

数据表

TK2R4E08QM 数据表/日文[Feb,2021]PDF: 597KB

数据表

TK2R4E08QM 数据表/英文[Feb,2021]PDF: 494KB

Simulation Model

PSpice Model[Feb,2023]ZIP: 41KB

Simulation Model

LTspice Model[Feb,2023]ZIP: 49KB

Thermal Simulation Model

Simplified CFD Model[Aug,2024]ZIP: 11KB

Reliability Information

Reliability Data[Aug,2024]PDF: 169KB

相关技术数据

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

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Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

数据表

TK2R4E08QM 数据表/日文[Feb,2021]PDF: 597KB

数据表

TK2R4E08QM 数据表/英文[Feb,2021]PDF: 494KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

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Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Feb,2023]ZIP: 41KB

Simulation Model

LTspice Model[Feb,2023]ZIP: 49KB

Thermal Simulation Model

Simplified CFD Model[Aug,2024]ZIP: 11KB

Reliability Information

Reliability Data[Aug,2024]PDF: 169KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

产品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅩ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name TO-220
Package Image TO-220
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 10.16×15.1×4.45
Package Dimensions 查看

 Please refer to the link destination to check the detailed size.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 80 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 120 A
Power Dissipation PD 300 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 3.5 V
Gate threshold voltage (Min) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 3.2 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.44 mΩ
Input capacitance (Typ.) Ciss - 13000 pF
Total gate charge (Typ.) Qg VGS=10V 178 nC
Output charge (Typ.) Qoss - 210 nC
Reverse recovery time (Typ.) trr - 76 ns
Reverse recovery charge (Typ.) Qrr - 113 nC
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Feb,2023

Feb,2023

Aug,2024

Aug,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

可订购器件型号

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS
TK2R4E08QM,S1X 50 Yes

应用

不间断电源
在设计不间断电源（UPS）时，低功耗和小型化等非常重要。东芝提供适用于电源单元、逆变器／转换器单元、控制单元、信号传输单元等的各种半导体产品的信息以及电路配置示例。
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变频器／伺服
在设计变频器／伺服时，低功耗、小型化和稳定运行等非常重要。东芝提供适用于电源单元、电机驱动电路单元、信号传输单元等的各种半导体产品的信息以及电路配置示例。
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